A Product Line of
Diodes Incorporated
ZXMP6A17N8
60V P-CHANNEL ENHANCEMENT MODE MOSFET
ADVANCE INFORMATION
Product Summary
V
(BR)DSS
R
DS(on)
125mΩ @ V
GS
= -10V
-60V
190mΩ @ V
GS
= -4.5V
-2.8A
I
D
T
A
= 25°C
-3.4A
Features and Benefits
•
•
•
•
Fast switching speed
Low input capacitance
“Green” component and RoHS compliant (Note 1)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
•
•
•
•
Motor control
Backlighting
DC-DC Converters
Power management functions
•
•
•
•
•
•
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See diagram below
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
SO-8
D
G
S
Top View
Top View
Equivalent Circuit
Ordering Information
(Note 1)
Product
ZXMP6A17N8TC
Notes:
Marking
See below
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
2,500
1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about
Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
ZXMP
6A17
YYWW
ZXMP = Product Type Marking Code, Line 1
6A17 = Product Type Marking Code, Line 2
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 - 53)
ZXMP6A17N8
Document Number DS32076 Rev 1 - 2
1 of 8
www.diodes.com
March 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP6A17N8
ADVANCE INFORMATION
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
V
GS
= 10V
(Note 3)
T
A
= 70°C (Note 3)
(Note 2)
(Note 4)
(Note 3)
(Note 4)
Symbol
V
DSS
V
GS
I
D
I
DM
I
S
I
SM
Value
-60
±20
-3.42
-2.73
-2.7
-15.6
-3.4
-15.6
Unit
V
V
A
A
A
A
Pulsed Drain current
V
GS
= 10V
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
Notes:
Symbol
(Note 2)
P
D
(Note 3)
(Note 2)
(Note 3)
(Note 5)
R
θ
JA
R
θ
JL
T
J
, T
STG
Value
1.56
12.5
2.5
20
80
50
32
-55 to 150
Unit
W
mW/°C
°C/W
°C
2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t
≤
10 sec.
4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMP6A17N8
Document Number DS32076 Rev 1 - 2
2 of 8
www.diodes.com
March 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP6A17N8
ADVANCE INFORMATION
Thermal Characteristics
1.6
Max Power Dissipation (W)
-I
D
Drain Current (A)
10
Limited
1
DC
1s
100ms
10ms
Single Pulse
T
amb
=25°C
1ms
100µs
R
DS(on)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
25mm x 25mm
1oz FR4
100m
10m
1m
100m
-V
DS
Drain-Source Voltage (V)
1
10
100 120 140 160
Temperature (°C)
Safe Operating Area
80
70
60
50
40
30
20
10
0
100µ
1m
10m 100m
D=0.2
D=0.1
Single Pulse
D=0.05
D=0.5
Derating Curve
Thermal Resistance (°C/W)
Maximum Power (W)
T
amb
=25°C
100
Single Pulse
T
amb
=25°C
10
1
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ZXMP6A17N8
Document Number DS32076 Rev 1 - 2
3 of 8
www.diodes.com
March 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP6A17N8
ADVANCE INFORMATION
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 6)
Forward Transconductance (Notes 6 & 7)
Diode Forward Voltage (Note 6)
Reverse recovery time (Note 7)
Reverse recovery charge (Note 7)
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 8)
Total Gate Charge (Note 8)
Gate-Source Charge (Note 8)
Gate-Drain Charge (Note 8)
Turn-On Delay Time (Note 8)
Turn-On Rise Time (Note 8)
Turn-Off Delay Time (Note 8)
Turn-Off Fall Time (Note 8)
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
fs
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
-60
⎯
⎯
-1.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
4.7
-0.85
25.1
27.2
637
70
53
9.0
17.7
1.6
4.4
2.6
3.4
26.2
11.3
Max
⎯
-0.5
±100
⎯
0.125
0.190
⎯
-0.95
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
μA
nA
V
Ω
S
V
ns
nC
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
I
D
= -250μA, V
GS
= 0V
V
DS
= -60V, V
GS
= 0V
V
GS
=
±20V,
V
DS
= 0V
I
D
= -250μA, V
DS
= V
GS
V
GS
= -10V, I
D
= -2.3A
V
GS
= -4.5V, I
D
= -1.9A
V
DS
= -15V, I
D
= -2.3A
I
S
= -2.0A, V
GS
= 0V
I
S
= -1.7A, di/dt = 100A/μs
V
DS
= -30V, V
GS
= 0V
f = 1MHz
V
GS
= -4.5V
V
GS
= -10V
V
DS
= -30V
I
D
= -2.2A
V
DD
= -30V, V
GS
= -10V
I
D
= -1A, R
G
≅
6.0Ω
6. Measured under pulsed conditions. Pulse width
≤
300μs; duty cycle
≤
2%
7. For design aid only, not subject to production testing.
8. Switching characteristics are independent of operating junction temperatures.
ZXMP6A17N8
Document Number DS32076 Rev 1 - 2
4 of 8
www.diodes.com
March 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP6A17N8
ADVANCE INFORMATION
Typical Characteristics
T = 25°C
10V
5V
T = 150°C
10V
5V
4.5V
3.5V
3V
2.5V
2V
10
-I
D
Drain Current (A)
1
2.5V
-I
D
Drain Current (A)
4V
3.5V
3V
10
1
-V
GS
0.1
2V
-V
GS
0.1
1.5V
0.01
0.1
1
10
0.01
0.1
1
10
-V
DS
Drain-Source Voltage (V)
-V
DS
Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
1.8
V
GS
= -10V
10
Normalised R
DS(on)
and V
GS(th)
-I
D
Drain Current (A)
1.6
1.4
1.2
1.0
0.8
0.6
-50
0
50
V
GS
= V
DS
I
D
= -250uA
I
D
= - 2.3A
R
DS(on)
T = 150°C
1
T = 25°C
0.1
-V
DS
= 10V
V
GS(th)
1
2
3
4
100
150
-V
GS
Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
R
DS(on)
Drain-Source On-Resistance
(Ω)
100
2V
-V
GS
2.5V
3V
3.5V
4V
5V
Normalised Curves v Temperature
-I
SD
Reverse Drain Current (A)
10
10
T = 150°C
1
1
T = 25°C
0.1
V
GS
= 0V
0.1
T = 25°C
10V
0.01
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1
10
On-Resistance v Drain Current
-I
D
Drain Current (A)
-V
SD
Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
ZXMP6A17N8
Document Number DS32076 Rev 1 - 2
5 of 8
www.diodes.com
March 2010
© Diodes Incorporated
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