ZXMP6A18DN8TC datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > semiconductor> Discrete semiconductor> ZXMP6A18DN8TC

ZXMP6A18DN8TC: Description3.7 A, 60 V, 0.055 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET; Categorysemiconductor Discrete semiconductor; File Size227KB，8 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

Download Datasheet Parametric Compare View All

ZXMP6A18DN8TC Overview

3.7 A, 60 V, 0.055 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET

ZXMP6A18DN8TC Parametric

Parameter Name	Attribute value
Number of terminals	8
Minimum breakdown voltage	60 V
Processing package description	SOIC-8
Lead-free	Yes
EU RoHS regulations	Yes
China RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE TIN
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
structure	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Number of components	2
transistor applications	SWITCHING
Transistor component materials	SILICON
Channel type	P-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	GENERAL PURPOSE POWER
Maximum leakage current	3.7 A
Maximum drain on-resistance	0.0550 ohm
Maximum leakage current pulse	23 A

Preview

Download Datasheet

View All

ZXMP6A18DN8

DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET

Product Summary

ADVANCE INFORMATION

(BR)DSS

-60V

DS(on)

Max

55mΩ @ V

= -10V

= +25°C

-4.8A

Features

•

Low On-Resistance

Fast Switching Speed

Low Threshold

Low Gate Drive

Low Profile SOIC Package

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

PPAP capable (Note 4)

Description

This MOSFET is designed to minimize the on-state resistance and yet

maintain superior switching performance, making it ideal for high-

efficiency power management applications.

•

Mechanical Data

Applications

•

Disconnect Switches

Motor Drive

•

SO-8

•

Case: SO-8

Case Material: Molded Plastic, “Green” Molding Compound;

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish; Solderable per MIL-STD-202,

Method 208

Weight: 0.074 grams (Approximate)

Top View

Equivalent Circuit

Ordering Information

(Notes 4 & 5)

Product

ZXMP6A18DN8TA

ZXMP6A18DN8TC

ZXMP6A18DN8QTC

Notes:

Compliance

Standard

Automotive

Case

SO-8

Quantity per reel

500

2,500

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally

the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

SO-8

6A18D

ZXMP6A18D = Product Type Marking Code

YYWW = Date Code Marking

YY = Year (ex: 11 = 2011)

WW = Week (01 - 53)

ZXMP6A18DN8

Document Number DS33592 Rev 3 - 2

1 of 8

www.diodes.com

December 2014

ZXMP6A18DN8TC Related Products

	ZXMP6A18DN8TC	ZXMP6A18DN8
Description	3.7 A, 60 V, 0.055 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET	3.7 A, 60 V, 0.055 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
Number of terminals	8	8
Minimum breakdown voltage	60 V	60 V
Processing package description	SOIC-8	SOIC-8
Lead-free	Yes	Yes
EU RoHS regulations	Yes	Yes
China RoHS regulations	Yes	Yes
state	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	RECTANGULAR
Package Size	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes
Terminal form	GULL WING	GULL WING
terminal coating	MATTE TIN	MATTE TIN
Terminal location	DUAL	DUAL
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY
structure	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Number of components	2	2
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Channel type	P-CHANNEL	P-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT
Transistor type	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER
Maximum leakage current	3.7 A	3.7 A
Maximum drain on-resistance	0.0550 ohm	0.0550 ohm
Maximum leakage current pulse	23 A	23 A

Recommended Resources

Neon bubble anti-spark circuit

Practical voice-controlled music lantern (2)

Konka 60P movement rear projection color TV field fault protection circuit diagram

Transistor electronic relay controlling base

Telephone anti-theft indicator circuit circuit diagram

4-way signal alternate display circuit

Shortcut: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

Popular Components