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2SH18

Description
18A, 600V, N-CHANNEL IGBT, TO-220AB, SC-46, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size42KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

2SH18 Overview

18A, 600V, N-CHANNEL IGBT, TO-220AB, SC-46, 3 PIN

2SH18 Parametric

Parameter NameAttribute value
Parts packaging codeTO-220AB
package instructionSC-46, 3 PIN
Contacts3
Reach Compliance Codecompli
Maximum collector current (IC)18 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
Gate-emitter maximum voltage20 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)60 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Base Number Matches1
ADE–208–291 (Z)
2SH18
Silicon N-Channel IGBT
1st. Edition
Feb. 1995
Application
High speed power switching
TO–220AB
Features
• High speed switching
• Low on saturation voltage
1
2
1
3
2
3
1. Gate
2. Collector
3. Emitter
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector dissipation
Channel temperature
Storage temperature
Symbol
V
CES
Ratings
600
±20
18
30
60
150
–55 to +150
Unit
V
V
A
A
W
°C
°C
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
ic(peak)
P
C
*
T
j
I
C
V
GES
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
Tstg
———————————————————————————————————————————
* Value at Tc = 25°C
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