A Product Line of
Diodes Incorporated
ZXMP10A17E6
100V P-CHANNEL ENHANCEMENT MODE MOSFET
ADVANCE INFORMATION
Product Summary
V
(BR)DSS
R
DS(on)
350mΩ @ V
GS
= -10V
-100V
450mΩ @ V
GS
= -6.0V
-1.4
I
D
T
A
= 25°C
-1.6
Features and Benefits
•
•
•
•
Fast switching speed
Low gate drive
Low input capacitance
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
•
•
•
•
Motor control
DC-DC Converters
Power management functions
Uninterrupted power supply
•
•
•
•
•
Case: SOT23-6
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.018 grams (approximate)
SOT23-6
D
D
G
Top View
Pin Out - Top View
D
D
S
D
G
S
Equivalent Circuit
Ordering Information
Product
ZXMP10A17E6TA
Marking
See below
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
Marking Information
1A17
1A17 = Product Type Marking Code
ZXMP10A17E6
Document Number DS32027 Rev. 3 - 2
1 of 8
www.diodes.com
December 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP10A17E6
ADVANCE INFORMATION
Maximum Ratings
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
@T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
GS
(Note 2)
T
A
= 70°C (Note 2)
(Note 1)
(Note 3)
(Note 2)
(Note3 )
I
D
I
DM
I
S
I
SM
Value
-100
±20
-1.6
-1.3
-1.3
-7.7
-2.1
-7.7
Unit
V
V
A
A
A
A
Characteristic
V
GS
= 10V
Pulsed Drain current
V
GS
= 10V
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Operating and storage temperature range
Notes:
Symbol
(Note 1)
P
D
(Note 2)
(Note 1)
(Note 2)
R
θ
JA
T
J
, T
STG
Value
1.1
8.8
1.7
13.7
113
73
-55 to 150
Unit
W
mW/°C
°C/W
°C
1. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
2. Same as note (1), except the device is measured at t
≤
5 sec.
3. Same as note (1), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
ZXMP10A17E6
Document Number DS32027 Rev. 3 - 2
2 of 8
www.diodes.com
December 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP10A17E6
ADVANCE INFORMATION
Thermal Characteristics
10
R
DS(on)
Max Power Dissipation (W)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
-I
D
Drain Current (A)
Limited
1
DC
1s
100m s
100m
10ms
10m
1ms
100us
Single Pulse
T
amb
=25°C
1
10
100
-V
DS
Drain-Source Voltage (V)
Temperature (°C)
Safe Operating Area
Thermal Resistance (°C/W)
T
amb
=25°C
Derating Curve
100
80
D=0.5
Maximum Power (W)
100
Single Pulse
T
amb
=25°C
60
40
20
D=0.1
Single Pulse
D=0.2
D=0.05
10
1
100µ
1m
10m 100m
1
10
100
1k
0
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ZXMP10A17E6
Document Number DS32027 Rev. 3 - 2
3 of 8
www.diodes.com
December 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP10A17E6
ADVANCE INFORMATION
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 4)
Forward Transconductance (Notes 4 & 5)
Diode Forward Voltage (Note 4)
Reverse recovery time (Note 5)
Reverse recovery charge (Note 5)
DYNAMIC CHARACTERISTICS
(Note 5)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 6)
Total Gate Charge (Note 6)
Gate-Source Charge (Note 6)
Gate-Drain Charge (Note 6)
Turn-On Delay Time (Note 6)
Turn-On Rise Time (Note 6)
Turn-Off Delay Time (Note 6)
Turn-Off Fall Time (Note 6)
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
fs
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
-100
⎯
⎯
-2.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
2.8
-0.85
33
48
424
36.6
29.8
7.1
10.7
1.7
3.8
3.0
3.5
13.4
7.2
Max
⎯
-0.5
±100
-4.0
0.350
0.450
⎯
-0.95
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
μA
nA
V
Ω
S
V
ns
nC
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
I
D
= -250μA, V
GS
= 0V
V
DS
= -100V, V
GS
= 0V
V
GS
=
±20V,
V
DS
= 0V
I
D
= -250μA, V
DS
= V
GS
V
GS
= -10V, I
D
= -1.4A
V
GS
= -6V, I
D
= -1.2A
V
DS
= -15V, I
D
= -1.4A
I
S
= -1.7A, V
GS
= 0V
I
S
= -1.5A, di/dt= 100A/μs
V
DS
= -50V, V
GS
= 0V
f= 1MHz
V
GS
= -6.0V
V
GS
= -10V
V
DS
= -50V
I
D
= -1.4A
V
DD
= -50V, V
GS
= -10V
I
D
= -1A, R
G
≅
6.0Ω
4. Measured under pulsed conditions. Pulse width
≤
300μs; duty cycle
≤
2%
5. For design aid only, not subject to production testing.
6. Switching characteristics are independent of operating junction temperatures.
ZXMP10A17E6
Document Number DS32027 Rev. 3 - 2
4 of 8
www.diodes.com
December 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP10A17E6
Typical Characteristics
ADVANCE INFORMATION
-I
D
Drain Current (A)
-I
D
Drain Current (A)
10
T = 25°C
10V
7V
5V
10
1
0.1
T = 150°C
10V
7V
5V
4.5V
4V
3.5V
1
4.5V
4V
0.1
-V
GS
0.01
3V
-V
GS
0.01
0.1
1
10
1E-3
0.1
1
10
-V
DS
Drain-Source Voltage (V)
-V
DS
Drain-Source Voltage (V)
Output Characteristics
2.0
Output Characteristics
Normalised R
DS(on)
and V
GS(th)
-I
D
Drain Current (A)
1
T = 150°C
T = 25°C
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-50
0
V
GS
= -10V
I
D
= - 1.4A
R
DS(on)
0.1
V
GS(th)
V
GS
= V
DS
I
D
= -250uA
-V
DS
= 10V
0.01
3
4
5
50
100
150
-V
GS
Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
R
DS(on)
Drain-Source On-Resistance
(Ω)
100
-V
GS
4V
4.5V
T = 25°C
Normalised Curves v Temperature
-I
SD
Reverse Drain Current (A)
10
T = 150°C
10
5V
1
T = 25°C
1
7V
10V
0.1
0.01
0.1
1
10
0.01
0.2
0.4
0.6
0.8
1.0
1.2
-I
D
Drain Current (A)
-V
SD
Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance v Drain Current
ZXMP10A17E6
Document Number DS32027 Rev. 3 - 2
5 of 8
www.diodes.com
December 2009
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
