NOT RECOMMENDED FOR NEW DESIGN -
NO ALTERNATE PART
ZXMP2120E5
200V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
R
DS(ON) MAX
28Ω @ V
GS
= -10V
I
D MAX
T
A
= +25°
C
-122mA
Features and Benefits
High Voltage
Low On-Resistance
Fast Switching Speed
Low Gate Drive
Low Threshold
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
-200V
Description
This new generation trench MOSFET features a unique structure
combining the benefits of low on-resistance and fast switching,
making it ideal for high-efficiency power management applications.
Mechanical Data
Case: SOT25
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.016 grams (Approximate)
Applications
Active Clamping of Primary Side MOSFETs in 48V DC-DC
Converters
D
SOT25
G
S
Top View
Pin Out - Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
ZXMP2120E5TA
Notes:
Marking
P120
Reel Size (inches)
7
Tape Width (mm)
8
Quantity per Reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See http://www.diodes.com/quality/lead_free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
SOT25
P120
P120 = Product Type Marking Code
ZXMP2120E5
Document number: DS33600 Rev. 4 - 3
1 of 7
www.diodes.com
June 2018
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN -
NO ALTERNATE PART
ZXMP2120E5
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (V
GS
= -10V; T
A
= +25° (Note 5)
C)
Pulsed Drain Current (Note 6)
Pulsed Source Current (Body Diode) (Note 6)
Symbol
V
DSS
V
GSS
I
D
I
DM
I
SM
Value
-200
±20
-122
-0.7
-0.7
Unit
V
V
mA
A
A
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Power Dissipation at T
A
= +25° (Note 5)
C
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
T
J
,
T
STG
Value
0.75
6
167
-55 to +150
Unit
W
mW/°
C
°
C/W
°
C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
(@T
A
= +25° unless otherwise specified.)
C,
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
g
fs
I
D(ON)
C
iss
C
oss
C
rss
t
D(ON)
t
R
t
D(OFF)
t
F
Min
-200
-
-
-1.5
-
50
-300
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-10
-100
20
-3.5
28
-
-
100
25
7
7
15
12
15
Unit
V
µA
nA
V
Ω
ms
mA
pF
pF
pF
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= -1mA
V
DS
= -200V, V
GS
= 0V
V
DS
= -160V, V
GS
= 0V, T
A
= +125°
C
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -1mA
V
GS
= -10V, I
D
= -150mA
V
DS
= -25V, I
D
= -150mA
V
DS
= -25V,
V
GS
=
-10V
V
DS
= -25V, V
GS
= 0V,
f = 1.0MHz
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 7)
Forward Transconductance (Notes 7 & 8)
On-State Drain Current (Note 7)
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 8)
Output Capacitance (Note 8)
Reverse Transfer Capacitance (Note 8)
Turn-On Delay Time (Notes 8 & 9)
Turn-On Rise Time (Notes 8 & 9)
Turn-Off Delay Time (Notes 8 & 9)
Turn-Off Fall Time (Notes 8 & 9)
Notes:
V
DD
= -25V, I
D
= -150mA
5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
8. Sample test.
9. Switching characteristics are independent of operating junction temperature.
ZXMP2120E5
Document number: DS33600 Rev. 4 - 3
2 of 7
www.diodes.com
June 2018
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN -
NO ALTERNATE PART
ZXMP2120E5
V
DS
- Drain Source Voltage (Volts)
Saturation Characteristics
ZXMP2120E5
Document number: DS33600 Rev. 4 - 3
3 of 7
www.diodes.com
June 2018
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN -
NO ALTERNATE PART
ZXMP2120E5
Capacitance v drain-source voltage
ZXMP2120E5
Document number: DS33600 Rev. 4 - 3
4 of 7
www.diodes.com
June 2018
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN -
NO ALTERNATE PART
ZXMP2120E5
Thermal Characteristics
T
A
= 25°
C
T
A
= 25°
C
T
A
= 25°
C
ZXMP2120E5
Document number: DS33600 Rev. 4 - 3
5 of 7
www.diodes.com
June 2018
© Diodes Incorporated
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