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Datasheet> All Categories > Discrete semiconductor> The transistor> MIO2400-17E10
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MIO2400-17E10

Description
Insulated Gate Bipolar Transistor, 2400A I(C), 1700V V(BR)CES, N-Channel, MODULE-9
CategoryDiscrete semiconductor    The transistor   
File Size202KB，6 Pages
ManufacturerIXYS
Environmental Compliance  
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MIO2400-17E10 Overview

Insulated Gate Bipolar Transistor, 2400A I(C), 1700V V(BR)CES, N-Channel, MODULE-9

MIO2400-17E10 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIXYS
Parts packaging codeMODULE
package instructionMODULE-9
Contacts9
Reach Compliance Codecompliant
Shell connectionISOLATED
Maximum collector current (IC)2400 A
Collector-emitter maximum voltage1700 V
ConfigurationCOMPLEX
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X9
Number of components3
Number of terminals9
Maximum operating temperature125 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)1320 ns
Nominal on time (ton)600 ns
VCEsat-Max2.6 V

MIO2400-17E10 Preview

MIO 2400-17E10
IGBT Module
Single switch
Short Circuit SOA Capability
Square RBSOA
C
C'
C
C
I
C80
= 2400 A
= 1700 V
V
CES
V
CE(sat) typ.
= 2.3 V
G
E'
E
E
E
IGBT
Symbol
V
CES
V
GES
I
C80
I
CM
t
SC
T
C
= 80°C
t
p
= 1 ms; T
C
= 80°C
V
CC
= 1000 V; V
CEM CHIP
=
<
1700 V;
V
GE
< 15 V; T
VJ
< 125°C
Conditions
Conditions
V
GE
= 0 V
1700
-o
2400
4800
10
±
20
e
4.5
u
V
V
A
A
µs
2.6
2.9
6.5
V
V
V
120 mA
500 nA
ns
ns
ns
ns
mJ
mJ
nF
nF
nF
µC
0.007 K/W
Maximum Ratings
s
Symbol
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
res
Q
ge
R
thJC
I
C
= 240 mA; V
CE
= V
GE
V
CE
= 1700 V; V
GE
= 0 V; T
VJ
= 125°C
V
CE
= 0 V; V
GE
=
±
20 V; T
VJ
= 125°C
Inductive load; T
VJ
= 125°C;
V
GE
= ±15 V; V
CC
= 900 V;
I
C
= 2400 A; R
G
= 0.56
Ω;
L
σ
= 60 nH
340
260
1050
270
600
980
230
22
10
22
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
I
C
= 2400 A; V
CE
= 900 V; V
GE
=
±
15 V
Collector emitter saturation voltage is given at chip level
IXYS reserves the right to change limits, test conditions and dimensions.
20110119a
© 2011 IXYS All rights reserved
p
h
V
CE(sat)
I
C
= 2400 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
a
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
2.3
2.6
t
Features
• NPT³ IGBT
- Low-loss
- Smooth switching waveforms for
good EMC
• Industry standard package
- High power density
- AISiC base-plate for high power
cycling capacity
- AIN substrate for low thermal resistance
Typical Applications
• AC power converters for
- industrial drives
- windmills
- traction
• LASER pulse generator
1-6
MIO 2400-17E10
Diode
Symbol
I
F80
I
FSM
Conditions
T
C
= 80°C
V
R
= 0 V; T
VJ
= 125°C; t
p
= 10 ms; half-sinewave
Maximum Ratings
2400
22000
A
A
Symbol
V
F
I
RM
t
rr
Q
RR
E
rec
R
thJC
Conditions
I
F
= 2400 A;
T
VJ
= 25°C
T
VJ
= 125°C
Characteristic Values
min.
typ. max.
1.65
1.70
1880
890
1025
720
2.0
V
V
A
ns
µC
mJ
0.012 K/W
V
CC
= 900 V; I
C
= 2400 A;
V
GE
= ±15 V; R
G
= 0.56Ω; T
VJ
= 125°C
Inductive load; L
σ
= 60 nH
Module
Symbol
T
JM
T
VJ
T
stg
V
ISOL
M
d
Conditions
max junction temperature
Operating temperature
Storage temperature
50 Hz
Mounting torque
-o
e
s
23
19
33
33
10
0.085
0.006
1500
+150
-40...+125
-40...+125
4000
4-6
8 - 10
Maximum Ratings
°C
°C
°C
V~
Nm
Nm
Base-heatsink, M6 screws
Main terminals, M8 screws
Symbol
d
A
d
S
L
σ
R
term-chip
*
)
R
thCH
Weight
Conditions
Clearance distance
Surface creepage
distance
a
h
terminal to base
terminal to terminal
terminal to base
terminal to terminal
Characteristic Values
min.
typ. max.
mm
mm
mm
mm
nH
m
Ω
K/W
g
Module stray inductance, C to E terminal
Resistance terminal to chip
per module;
λ
grease = 1 W/m•K
*
)
V = V
CE(sat)
+ R
term-chip
· I
C
resp. V = V
F
+ R
term-chip
· I
F
p
u
t
20110119a
Forward voltage is given at chip level
© 2011 IXYS All rights reserved
2-6
MIO 2400-17E10
4800
4400
4000
3600
3200
2800
I
C
[A]
2400
2000
1600
1200
800
400
0
0
1
2
3
V
CE
[V]
4
5
6
T
vj
= 25 °C
17V
15V
13V
11V
9V
I
C
[A]
4800
4400
4000
3600
3200
2800
2400
2000
1600
1200
800
400
0
0
1
2
3
V
CE
[V]
4
5
6
T
vj
= 125 °C
17V
15V
13V
11V
9V
Fig. 1 Typical output characteristics, chip level
4800
4400
4000
3600
3200
2800
I
C
[A]
2400
2000
1600
1200
800
400
0
0
1
2
V
CE
[V]
25 °C
125 °C
Fig. 2 Typical output characteristics, chip level
4800
4400
4000
3600
3200
2800
2400
2000
1600
1200
800
400
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13
V
GE
[V]
25 °C
125 °C
V
GE
= 15 V
3
4
Fig. 3 Typical onstate characteristics, chip level
20
h
a
s
5
e
p
V
CC
= 900 V
V
CC
= 1300
C [nF]
-o
I
C
[A]
I
C
= 2400 A
T
vj
= 25 °C
2
4
6
8
10 12
Q
g
[µC]
14
16
18
20
u
Fig. 4 Typical transfer characteristics, chip level
1000
15
100
V
GE
[V]
10
10
5
V
GE
= 0 V
f
OSC
= 1 MHz
V
OSC
= 50 mV
1
0
5
10
15
20
V
CE
[V]
25
30
35
0
0
Fig. 5 Typical gate charge characteristics
© 2011 IXYS All rights reserved
Fig. 6 Typical capacitances vs
collector-emitter voltage
t
V
CE
= 25 V
C
ies
C
oes
C
res
20110119a
3-6
MIO 2400-17E10
3.0
V
CC
= 900 V
R
G
= 0.56 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 60 nH
3.0
2.5
2.5
V
CC
= 900 V
I
C
= 2400 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 60 nH
E
on
2.0
E
on
, E
off
[J]
2.0
E
on
, E
off
[J]
1.5
1.5
E
off
1.0
1.0
E
off
E
on
0.5
0.5
0.0
0
1000
2000
I
C
[A]
3000
4000
5000
0.0
0
1
2
R
G
[ohm]
3
4
Fig. 7 Typical switching energies per pulse
vs collector current
10
V
CC
= 900 V
R
G
= 0.56 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 60 nH
t
d(on)
, t
r
, t
d(off)
, t
f
[µs]
Fig. 8 Typical switching energies per pulse
vs gate resistor
10
u
t
d(off)
t
d(on)
, t
r
, t
d(off)
, t
f
[µs]
1
-o
1
t
r
t
d(on)
t
f
t
d(on)
t
f
t
r
0.1
0
1000
2000
I
C
[A]
3000
4000
s
e
a
5000
0.1
0
1
2
R
G
[ohm]
3
4
5
2.5
V
CC
≤
1300 V
h
Fig. 9 Typical switching times vs collector current
Fig. 10 Typical switching times vs gate resistor
4800
4400
4000
3600
3200
125°C
25°C
2
p
1.5
I
Cpulse
/ I
C
I
F
[A]
2800
2400
2000
1
1600
1200
0.5
IC, Chip
IC, Module
0
0
500
1000
V
CE
[V]
1500
2000
800
400
0
0
0.5
1
V
F
[V]
1.5
2
2.5
Fig. 11 Turn-off safe operating area (RBSOA)
© 2011 IXYS All rights reserved
Fig. 12 Typical diode forward characteristics,
chip level
20110119a
t
V
CC
= 900 V
I
C
= 2400 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 60 nH
t
d(off)
4-6
MIO 2400-17E10
1000
900
800
700
I
RM
[A], Q
RR
[µC]
600
E
rec
[mJ]
500
400
E
rec
300
200
100
0
0
1000
2000
3000
4000
I
F
[A]
0
5000
500
1000
Q
RR
1500
V
CC
= 900 V
R
G
= 0.56 ohm
T
vj
= 125 °C
L
σ
= 60 nH
2500
1000
900
V
CC
= 900 V
I
F
= 2400 A
T
vj
= 125 °C
L
σ
= 60 nH
E
rec
2000
1800
1600
1400
1200
I
RM
Q
RR
1000
800
600
400
200
0
0
1
2
3
4
5
R
G
[ohm]
I
RM
[A], Q
RR
[µC]
I
RM
2000
800
700
600
E
rec
[mJ]
500
400
300
200
100
0
Fig. 13 Typical reverse recovery characteristics
vs forward current
Fig. 14 Typical reverse recovery characteristics
vs gate resistor
0.1
s
e
Z
th(j-c)
Diode
-o
Z
th(j-h)
[K/W] IGBT, DIODE
0.01
u
Z
th (j-c)
(t) =
∑
R
i
(1 - e
- t/
τ
i
)
i
=
1
t
h
Z
th(j-c)
IGBT
a
n
i
IGBT
1
4.91
189
8.17
196
2
1.35
22
2.16
31
3
0.444
2.4
0.862
7.4
4
0.331
0.54
0.885
1.4
0.001
p
Ri(K/kW)
τ
i
(ms)
Ri(K/kW)
τ
i
(ms)
0.0001
0.001
0.01
0.1
t [s]
1
10
Fig. 15 Thermal impedance vs time
DIODE
20110119a
© 2011 IXYS All rights reserved
5-6
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