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ZXTN25012EFH

Description
12V, SOT23, NPN medium power transistor
File Size360KB,6 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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ZXTN25012EFH Overview

12V, SOT23, NPN medium power transistor

ZXTN25012EFH
12V, SOT23, NPN medium power transistor
Summary
BV
CEO
> 12V
BV
ECX
> 6V
h
FE
> 500
I
C(cont)
= 6A
V
CE(sat)
< 32mV @ 1A
R
CE(sat)
= 23m
P
D
= 1.25W
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
C
B
Features
High power dissipation SOT23 package
High peak current
Very high gain
Low saturation voltage
6V reverse blocking voltage
E
E
C
B
Pinout - top view
Applications
MOSFET gate drivers
Power switches
Motor control
DC fans
DC-DC converters
Ordering information
Device
ZXTN25012EFHTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity per reel
3,000
Device marking
1C3
Issue 3 - March 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com

ZXTN25012EFH Related Products

ZXTN25012EFH ZXTN25012EFHTA
Description 12V, SOT23, NPN medium power transistor 12V, SOT23, NPN medium power transistor

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