ZXTN25012EFH
12V, SOT23, NPN medium power transistor
Summary
BV
CEO
> 12V
BV
ECX
> 6V
h
FE
> 500
I
C(cont)
= 6A
V
CE(sat)
< 32mV @ 1A
R
CE(sat)
= 23m
P
D
= 1.25W
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
C
B
Features
•
•
•
•
•
High power dissipation SOT23 package
High peak current
Very high gain
Low saturation voltage
6V reverse blocking voltage
E
E
C
B
Pinout - top view
Applications
•
•
•
•
•
MOSFET gate drivers
Power switches
Motor control
DC fans
DC-DC converters
Ordering information
Device
ZXTN25012EFHTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity per reel
3,000
Device marking
1C3
Issue 3 - March 2008
© Zetex Semiconductors plc 2008
1
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ZXTN25012EFH
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
Continuous collector current
(c)
Base current
Peak pulse current
Power dissipation at T
amb
=25°C
(a)
Linear derating factor
Power dissipation at T
amb
=25°C
(b)
Linear derating factor
Power dissipation at T
amb
=25°C
(c)
Linear derating factor
Power dissipation at T
amb
=25°C
(d)
Linear derating factor
Operating and storage temperature range
Symbol
V
CBO
V
CEO
V
ECX
V
EBO
I
C
I
B
I
CM
P
D
Limit
20
12
6
7
6
1
15
0.73
5.84
1.05
8.4
1.25
9.6
1.81
14.5
- 55 to 150
Unit
V
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
P
D
P
D
P
D
T
j
, T
stg
Thermal resistance
Parameter
Junction to ambient
(a)
Junction to ambient
(b)
Junction to ambient
(c)
Junction to ambient
(d)
Symbol
R
JA
R
JA
R
JA
R
JA
Limit
171
119
100
69
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Issue 3 - March 2008
© Zetex Semiconductors plc 2008
2
www.zetex.com
ZXTN25012EFH
Characteristics
Issue 3 - March 2008
© Zetex Semiconductors plc 2008
3
www.zetex.com
ZXTN25012EFH
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
Emitter-collector breakdown
voltage (reverse blocking)
Emitter-collector breakdown
voltage (base open)
Symbol
BV
CBO
BV
CEO
BV
EBO
BV
ECX
BV
ECO
Min.
20
12
7
6
4.5
Typ.
40
17
8.3
8.0
5.5
<1
<1
28
45
60
160
Base-emitter saturation
voltage
Base-emitter turn-on voltage
Static forward current
transfer ratio
V
BE(sat)
V
BE(on)
h
FE
500
500
300
40
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
f
T
C
OBO
t
d
t
r
t
s
t
f
920
800
800
750
460
55
260
25.6
70.9
69.8
233
71.6
300 s; duty cycle
2%.
Max.
Unit Conditions
V
V
V
V
V
I
C
= 100 A
I
C
= 10mA
(*)
I
E
= 100 A
I
E
= 100 A, R
BC
< 1k or
0.25V > V
BC
> -0.25V
I
E
= 100 A,
V
CB
= 20V
V
CB
= 20V, T
amb
= 100°C
V
EB
= 5.6V
I
C
= 1A, I
B
= 100mA
(*)
I
C
= 1A, I
B
= 10mA
(*)
I
C
= 2A, I
B
= 40mA
(*)
I
C
= 6A, I
B
= 120mA
(*)
I
C
= 6A, I
B
= 120mA
(*)
I
C
= 6A, V
CE
= 2V
(*)
I
C
= 10mA, V
CE
= 2V
(*)
I
C
= 1A, V
CE
= 2V
(*)
I
C
= 4A, V
CE
= 2V
(*)
I
C
= 15A, V
CE
= 2V
(*)
MHz I
C
= 50mA, V
CE
= 10V
f = 100MHz
Collector-base cut-off current I
CBO
Emitter-base cut-off current
Collector-emitter saturation
voltage
I
EBO
V
CE(sat)
50
0.5
50
32
55
75
190
1000
900
1500
nA
A
nA
mV
mV
mV
mV
mV
mV
35
pF
ns
ns
ns
ns
V
CB
= 10V, f = 1MHz
(*)
V
CC
= 10V.
I
C
= 1A,
I
B1
= I
B2
= 10mA.
NOTES:
(*) Measured under pulsed conditions. Pulse width
Issue 3 - March 2008
© Zetex Semiconductors plc 2008
4
www.zetex.com
ZXTN25012EFH
Typical characteristics
Issue 3 - March 2008
© Zetex Semiconductors plc 2008
5
www.zetex.com