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ZXTN25012EFL

Description
2000 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size469KB,8 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric View All

ZXTN25012EFL Overview

2000 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR

ZXTN25012EFL Parametric

Parameter NameAttribute value
Maximum collector current2 A
Maximum Collector-Emitter Voltage12 V
Number of terminals3
Maximum off time305 ns
Maximum on-time141 ns
Processing package descriptionSOT-23, 3 PIN
each_compliYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateActive
structureSINGLE
Minimum DC amplification factor30
jesd_30_codeR-PDSO-G3
jesd_609_codee3
moisture_sensitivity_level1
Number of components1
Maximum operating temperature150 Cel
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
eak_reflow_temperature__cel_260
larity_channel_typeNPN
qualification_statusCOMMERCIAL
surface mountYES
terminal coatingMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
ime_peak_reflow_temperature_max__s_40
Transistor component materialsSILICON
Rated crossover frequency260 MHz
ZXTN25012EFL
12V, SOT23, NPN low power transistor
Summary
BV
CEO
> 12V
BV
ECO
> 4.5V
h
FE
> 500
I
C(cont)
= 2A
V
CE(sat)
< 65 mV @ 1A
R
CE(sat)
= 46 m
P
D
= 350mW
Description
Advanced process capability has been used to achieve high current gain
hold up making this device ideal for applications requiring high pulse
currents.
C
B
Features
High peak current
Low saturation voltage
6V reverse blocking voltage
E
Applications
MOSFET and IGBT gate driving
DC-DC conversion
LED driving
Interface between low voltage IC's and load
E
C
B
Pinout - top view
Ordering information
Device
ZXTN25012EFLTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity
per reel
3000
Device marking
1B6
Issue 2 - January 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com
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