A Product Line of
Diodes Incorporated
Green
ZXTN25100DG
QFZT653
100V NPN HIGH GAIN TRANSISTOR IN SOT223
Features
BV
CEX
> 180V
BV
CEO
> 100V
BV
ECO
> 6V
I
C
= 3A High Continuous Current
Low Saturation Voltage V
CE(sat)
< 100mV @ 1A
R
CE(sat)
= 85mΩ
Complementary PNP Type: ZXTP19100CG
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads; Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Applications
PSU Start-Up Circuit
DC-DC Converters
Motor Drive
Relay, Lamp and Solenoid Drive
SOT223
C
E
B
C
C
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Notes 4 & 5)
Product
ZXTN25100DGTA
ZXTN25100DGQTA
Notes:
Compliance
AEC-Q101
Automotive
Marking
ZXTN25100D
ZXTN25100D
Reel size (inches)
7
7
Tape width (mm)
12
12
Quantity per reel
1,000
1,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4.
Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
ZXTN25
100D
ZXTN25100D = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
YWW
ZXTN25100DG
Document Number DS33705 Rev. 3 - 2
1 of 7
www.diodes.com
May 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN25100DG
QFZT653
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage (forward blocking)
Collector-Emitter Voltage
Emitter-Collector Voltage (reverse blocking)
Emitter-Base Voltage
Continuous Collector Current
Base Current
Peak Pulse Current
Symbol
V
CBO
V
CEX
V
CEO
V
ECO
V
EBO
I
C
I
B
I
CM
Value
180
180
100
6
7
3
1
3.5
Unit
V
V
V
V
V
A
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
(Note 6)
Power Dissipation
Linear Derating Factor
(Note 7)
P
D
(Note 8)
(Note 9)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
(Note 10)
Symbol
Value
1.2
9.6
1.6
12.8
3
24
5.3
42
104
78
42
23.5
16
-55 to +150
Unit
W
mW/°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
R
θJA
R
θJL
T
J,
T
STG
°C/W
°C
ESD Ratings
(Note 11)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
6. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
7. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper.
8. Same as Note 6, except the device is mounted on 50mm x 50mm 2oz copper.
9. Same as Note 8 measured at t<5 seconds.
10. Thermal resistance from junction to solder-point (at the end of the collector lead).
11. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTN25100DG
Document Number DS33705 Rev. 3 - 2
2 of 7
www.diodes.com
May 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN25100DG
QFZT653
Thermal Characteristics and Derating Information
(@T
A
= +25°C, unless otherwise specified.)
10
V
CE(sat)
1m
Limit
I
C
Collector Current (A)
1
I
C
Collector Current (A)
Failure may occur
in this region
BV
BR(CEO)
= 100V
100µ
DC
1s
100ms 10ms
1ms
Single Pulse. T
amb
=25°C
50mm x 50mm 2oz
100µs
10µ
100m
1µ
BV
BR(CEX)
= 180V
10m
100m
1
10
100
100n
0
20
40 60
80 100 120 140 160 180 200
V
CE
Collector-Emitter Voltage (V)
Safe Operating Area
V
CE
Collector-Emitter Voltage (V)
Safe Operating Area
Single Pulse. T
amb
=25°C
Thermal Resistance (°C/W)
40
30
50mm x 50mm
2oz
Max Power Dissipation (W)
100
50mm x 50mm
2oz
D=0.5
20
D=0.2
Single Pulse
D=0.05
D=0.1
10
10
0
100µ
1m
10m 100m
1
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
Max Power Dissipation (W)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
50mm x 50mm 2oz
25mm x 25mm
1oz
15mm x 15mm
1oz
20
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
ZXTN25100DG
Document Number DS33705 Rev. 3 - 2
3 of 7
www.diodes.com
May 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN25100DG
QFZT653
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
CBO
BV
CEX
BV
CEO
BV
ECX
BV
ECO
BV
EBO
I
CBO
I
CEX
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
Min
180
180
100
6
6
7
300
120
40
Typ
220
220
130
8.2
8.7
8.3
< 1
<1
120
80
215
200
1020
905
450
170
60
10
175
154
8.7
16.4
115
763
158
Max
50
0.5
100
50
170
100
345
500
1100
1000
900
250
15
Unit
V
V
V
V
V
V
nA
µA
nA
nA
mV
mV
mV
mV
mV
mV
MHz
pF
pF
ns
ns
ns
ns
Test Condition
I
C
= 100µA
I
C
= 100µA, R
BE
<1kΩ or
-1V< V
BC
> 0.25V
I
C
= 10mA
I
C
= 100µA, R
BC
<1kΩor
0.25V< V
BC
> -0.25V
I
E
= 100µA
I
E
= 100µA
V
CB
= 180V
V
CB
= 180V, T
A
= 105°C
V
CE
= 100V, R
BE
<1kΩ or
-1V < V
BC
> 0.25V
V
EB
= 5.6V
I
C
= 0.5A, I
B
= 10mA
I
C
= 1A, I
B
= 100mA
I
C
= 2.5A, I
B
= 250mA
I
C
= 3A, I
B
= 600mA
I
C
= 3A, I
B
= 600mA
I
C
= 3A, V
CE
= 2V
I
C
= 10mA, V
CE
= 2V
I
C
= 0.5A, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
I
C
= 3A, V
CE
= 2V
V
CE
= 10V, I
C
= 50mA,
f = 100MHz
V
EB
= 0.5V, f = 1MHz
V
CB
= 10V, f = 1MHz
I
C
= 500mA, V
CC
= 10V,
I
B1
= -I
B2
= 50mA
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(forward blocking)
Collector-Emitter Breakdown Voltage (Note 12)
Emitter-Collector Breakdown Voltage
(reverse blocking)
Emitter-Collector Breakdown Voltage
(reverse blocking)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector-Emitter Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage (Note 12)
Base-Emitter Saturation Voltage (Note 12)
Base-Emitter Turn-On Voltage (Note 12)
DC Current Gain (Note 12)
Current Gain-Bandwidth Product (Note 12)
Input Capacitance (Note 12)
Output Capacitance (Note 12)
Delay Time
Rise Time
Storage Time
Fall Time
Note:
f
T
C
ibo
C
obo
t
d
t
r
t
s
t
f
12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
ZXTN25100DG
Document Number DS33705 Rev. 3 - 2
4 of 7
www.diodes.com
May 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN25100DG
QFZT653
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
1
Tamb=25°C
I
C
/I
B
=100
0.7
0.6
0.5
I
C
/I
B
=10
V
CE(SAT)
(V)
V
CE(SAT)
(V)
0.4
150°C
100m
I
C
/I
B
=50
I
C
/I
B
=20
I
C
/I
B
=10
0.3
0.2
0.1
100°C
25°C
10m
1m
10m
100m
1
10
0.0
10m
-55°C
100m
1
I
C
Collector Current (A)
I
C
Collector Current (A)
V
CE(SAT)
v I
C
1.6
1.4
150°C
V
CE
=2V
V
CE(SAT)
v I
C
800
700
1.2
I
C
/I
B
=10
-55°C
25°C
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1m
10m
100m
1
-55°C
100°C
25°C
600
500
400
300
200
100
0
Typical Gain (h
FE
)
1.0
Normalised Gain
V
BE(SAT)
(V)
0.8
0.6
100°C
0.4
150°C
0.2
1m
10m
100m
1
I
C
Collector Current (A)
I
C
Collector Current (A)
h
FE
v I
C
1.2
V
CE
=2V
-55°C
25°C
V
BE(SAT)
v I
C
1.0
V
BE(ON)
(V)
0.8
0.6
100°C
0.4
0.2
1m
150°C
10m
100m
1
I
C
Collector Current (A)
V
BE(ON)
v I
C
ZXTN25100DG
Document Number DS33705 Rev. 3 - 2
5 of 7
www.diodes.com
May 2015
© Diodes Incorporated
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