ZXTP25020CFH
20V, SOT23, PNP medium power transistor
Summary
BV
CEO
> -20V
BV
ECO
> -7V
I
C(cont)
= -4A
R
CE(sat)
= 34m
V
CE(sat)
< -55mV @ 1A
P
D
= 1.25W
Complementary part number ZXTN25020CFH
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
C
B
Features
•
•
•
•
High power dissipation SOT23 package
High peak current
Low saturation voltage
7V reverse blocking voltage
E
Applications
•
•
•
•
MOSFET and IGBT gate driving
DC - DC converters
Motor drive
High side driver
E
C
B
Pinout - top view
Tape width
(mm)
8
Quantity per reel
3,000
Ordering information
Device
ZXTP25020CFHTA
Reel size
(inches)
7
Device marking
1B2
Issue 3 - March 2008
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ZXTP25020CFH
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
Continuous collector current
(b)
Peak pulse current
Base current
Power dissipation at T
A
=25°C
(a)
Linear derating factor
Power dissipation at T
A
=25°C
(b)
Linear derating factor
Power dissipation at T
A
=25°C
(c)
Linear derating factor
Power dissipation at T
A
=25°C
(d)
Linear derating factor
Operating and storage temperature range
T
j
, T
stg
P
D
P
D
P
D
Symbol
V
CBO
V
CEO
V
ECO
V
EBO
I
C
I
CM
I
B
P
D
Limit
-25
-20
-7
-7
-4
-10
-1
0.73
5.84
1.05
8.4
1.25
9.6
1.81
14.5
-55 to 150
Unit
V
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient
(a)
Junction to ambient
(b)
Junction to ambient
(c)
Junction to ambient
(d)
Symbol
R
JA
R
JA
R
JA
R
JA
Limit
171
119
100
69
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Issue 3 - March 2008
© Zetex Semiconductors plc 2008
2
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ZXTP25020CFH
Characteristics
Issue 3 - March 2008
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3
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ZXTP25020CFH
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
Symbol
BV
CBO
BV
CEO
BV
EBO
Min.
-25
-20
-7
-7
-7
Typ.
-50
-35
-8.2
-8.0
-8.8
<-1
<-1
-43
-70
-120
-150
Base-emitter saturation
voltage
Base-emitter turn-on voltage
Static forward current
transfer ratio
V
BE(sat)
V
BE(on)
h
FE
200
150
85
-930
-810
350
250
140
40
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
f
T
C
OBO
t
d
t
r
t
s
t
f
285
32.4
38.4
49.2
168
55
300 s; duty cycle
2%.
Max.
Unit Conditions
V
V
V
V
V
I
C
= -100 A
I
C
= -10mA
(*)
I
E
= -100 A
I
E
= -100 A
(*)
R
BC
< 10k
or -0.25 < V
BC
< 0.25V
I
E
= -100 A
(*)
V
CB
= -20V
V
CB
= -20V, T
amb
= 100°C
V
EB
= -5.6V
I
C
= -1A, I
B
= -100mA
(*)
I
C
= -1A, I
B
= -20mA
(*)
I
C
= -2A, I
B
= -40mA
(*)
I
C
= -4A, I
B
= -200mA
(*)
I
C
= -4A, I
B
= -200mA
(*)
I
C
= -4A, V
CE
= -2V
(*)
I
C
= -10mA, V
CE
= -2V
(*)
I
C
= -1A, V
CE
= -2V
(*)
I
C
= -4A, V
CE
= -2V
(*)
I
C
= -10A, V
CE
= -2V
(*)
MHz I
C
= -50mA, V
CE
= -10V
f = 100MHz
Emitter-collector breakdown BV
ECX
voltage (reverse blocking)
Emitter-collector breakdown BV
ECO
voltage (base open)
Collector-base cut-off
current
I
CBO
-50
-20
-50
-55
-100
-170
-210
-1050
-900
500
nA
A
nA
mV
mV
mV
mV
mV
mV
Emitter-base cut-off current I
EBO
Collector-emitter saturation V
CE(sat)
voltage
40
pF
ns
ns
ns
ns
V
CB
= -10V, f = 1MHz
(*)
V
CC
= -15V.
I
C
= -750mA,
I
B1
= I
B2
= -15mA
NOTES:
(*) Measured under pulsed conditions. Pulse width
Issue 3 - March 2008
© Zetex Semiconductors plc 2008
4
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ZXTP25020CFH
Typical characteristics
Issue 3 - March 2008
© Zetex Semiconductors plc 2008
5
www.zetex.com