WEITRON
NPN Plastic-Encapsulate Transistor
P b
Lead(Pb)-Free
3DD13003B
FEATURES :
• power switching applications
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
MAXIMUM RATINGS (T
A
=25°C unless otherwise noted)
Parameter
Collector-Base
Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
Tstg
Value
700
400
9
1.5
0.9
150
-55 to +150
Units
V
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition Frequency
Fall time
Storage time
CLASSIFICATION OF h
FE
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)1
V
CE(sat)2
V
BE(sat)
f
T
t
f
ts
Test conditions
I
C
= 1mA, I
E
=0
I
C
= 10mA, I
B
=0
I
E
= 1mA, I
C
=0
V
CB
= 700V, I
E
=0
V
CE
= 400V, I
B
=0
V
EB
= 7V, I
C
=0
V
CE
= 10V, I
C
= 0.4 A
I
C
=1.5A,I
B
= 0.5A
I
C
=0.5A, I
B
= 0.1A
I
C
=0.5A, I
B
=0.1A
V
CE
=10V,I
C
=100mA,
f =1MHz
I
C
=1A
I
B1
=-I
B2
=0.2A
MIN
700
400
9
TYP
MAX
Units
V
V
V
100
50
10
20
40
3
0.8
1
4
0.7
4
µA
µA
µA
V
V
V
MHz
µs
µs
Rank
Range
20-25
25-30
30-35
35-40
WEITRON
hpp://www.weitron.com.tw
1/3
10-Nov-2010
Embedded System
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EEWORLD
