BAV70DW
BAV99DW
BAV756DW BAW567DW
BAV99BRW BAW56DW
Surface Mount Switching Multi-Chip
Diode Array
P b
Lead(Pb)-Free
MULTI-CHIP DIODES
150m AMPERES
75 VOLTS
Features:
* For General Purpose Switching Applications
* Fast Switching Speed
* High Conductance
* Easily Connected As Full Wave Bridge
Mechanical Data:
* Case : SOT-363
* Case Material : Molded Plastic. UL Flammability
Classification Ration 94V-0
* Moisture Sensitivity : Level 1 per J-STD-020C
* Terminals : Solderable per MIL-STD-202, Method 208
* Polarity : See Diagram
* Weight : 0.006 grams(appro)
6 5
1
4
2
3
SOT-363
SOT-363 Outline Dimensions
A
Unit:mm
SOT-363
4
6
5
B C
1
2
3
D
E
H
K
J
L
M
Dim
A
B
C
D
E
H
J
K
L
M
Min
Max
0.10
0.30
1.15
1.35
2.00
2.20
0.65 REF
0.30
0.40
1.80
2.20
-
0.10
0.80
1.10
0.25
0.40
0.10
0.25
WEITRON
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1/3
Rev.A 11-Aug-09
BAV70DW
BAV99DW
BAV756DW BAW567DW
BAV99BRW BAW56DW
Maximum Ratings
(T
A
=25°C Unless otherwise noted)
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Recti ed Output Current
(1,3)
Non-Repetitive Forward Current
@t=1.0µs
@t=1.0s
Power Dissipation
(1,3)
Thermal Resistance, Junction to Ambient Air
(1,3)
Junction & Storage Temperature Range
Symbol
V
RM
V
RRM
V
RM
V
R
V
R(RSM)
I
O
I
FSM
P
D
RθJA
Tj,Tstg
Value
100
Unit
V
75
53
150
2.0
1.0
200
625
-65 to +150
V
V
mA
A
mW
°C/W
°C
Electrical Characteristics
(T
A
=25°C Unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(2)
I
R
=2.5μA
Reverse Current
(2)
V
R
=75V
V
R
=20V
Forward Voltage
(2)
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
Total Capacitance
(VR=0V, f=1.0MHz)
Reverse Recover Time
I
F
= I
R
= 10mA, I
rr
= 0.1 x I
R
, R
L
= 100Ω
Symbol
V
(BR)R
Min
75
Typ
-
Max
-
2.5
25
715
855
1000
1250
2.0
4.0
Unit
A
μA
nA
I
R
-
-
V
F
-
-
mA
C
D
T
rr
-
-
-
-
pF
nS
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout,.
2. Short duration test pulse used to minimize self-heating effect.
3. One or more diodes loaded.
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WEITRON
2/3
Rev.A 11-Aug-09
BAV70DW
BAV99DW
BAV756DW BAW567DW
BAV99BRW BAW56DW
Device Marking
Item
BAV70DW
BAV756DW
BAV99BRW
BAV99DW
BAW567DW
BAW56DW
Marking
KJA
KCA
KGJ
KJG
KAC
KJC
Eqivalent Circuit diagram
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
6
5
4
6
5
4
6
5
4
6
5
4
6
5
4
6
5
4
Typical Characteristics
I
R
, INSTATANEOUS REVERSE CURRENT (nA)
I
F
, INSTATANEOUS FORWARD CURRENT (A)
1
10000
1000
T
A
= 150°C
T
A
= 125°C
T
A
= 75°C
0.1
T
A
= 150°C
T
A
= 75°C
100
T
A
= 25°C
10
T
A
= 0°C
1
T
A
= -40°C
0.01
T
A
= 25°C
T
A
= 0°C
T
A
= -40°C
0.001
0.1
1.0
0.5
1.5
0
V
R
, INSTANTANEOUS FORWARD VOLTAGE(V)
0
20
40
60
80
100
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig.1 Forward Characteristics
Fig.2 Typical Reverse Characteristics
C
T
, TOTAL CAPACITANCE (pF)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
f = 1.0MHz
P
d
, POWER DISSIPATION (wW)
2.0
250
200
150
100
50
0
10
20
30
V
R
, REVERSE VOLTAGE(V)
40
0
Fig.3 Typical Capacitance vs. Reverse Voltage
25
50
75
100
125 150
T
A
, AMBIENT TEMPERATURE (˚C)
Fig.4 Power Derating Curve
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Rev.A 11-Aug-09