BC807-16/ BC807-25
BC807-40
General Purpose Transistor
PNP Silicon
Maximum Ratings
( T
A
=25 C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Symbol
V CEO
VCBO
VEBO
IC
COLLECTOR
3
MARKING DIAGRAM
3
1
BASE
2
EMITTER
1
2
SOT-23
Value
-45
-50
-5.0
500
Unit
V
V
V
mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
(1)
(Note 1.)T
A
=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina
Substrate, (Note 2.) T
A
=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Symbol
PD
R
q
JA
PD
R
q
JA
TJ,Tstg
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Device Marking
BC807-17=5A1 , BC807-25=5B1 , BC807-40=5C1
1.F R -5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
WEITRON
Rev.A 16-Dec-08
BC807-16/BC807-25
BC807-40
WE IT R ON
(T
A
=25 C Unless Otherwise noted)
Symbol
Min
Typ
Max
Unit
Electrical Characteristics
Off Characteristics
Characteristics
Collector-Emitter Breakdown Voltage
(I
C
= -10mA)
Collector-Emitter Breakdown Voltage
(I
C
=-10 µA ,VEB=0)
Emitter-Base Breakdown Voltage
(I
E
=-1.0 µA)
Collector Cutoff Current (V
CB
=20V)
(VCB=20V, TA=150 C)
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
-45
-50
-5.0
-
-
-
-
-
-
-
-
-
-
100
5.0
V
V
V
nA
m
A
Electrical Characteristics
(T
A
=25 C Unless Otherwise noted)
Symbol
Min
Typ
Max
Unit
Characteristics
On Characteristics
DC Current Gain
(IC= -100mA, VCE=-1.0V)
BC807-16
BC807-25
BC807-40
hFE
100
160
250
40
VCE(sat)
VBE(on)
-
-
-
-
-
-
-
-
-
-
-
-
250
400
600
-
-0.7
-
-1.2
-
(IC= -500mA,VCE=-1.0V)
Collector-Emitter Saturation Voltage
(IC= -500mA, IB=50mA)
Base-Emitter On Voltage
(IC= -500mA, IB=-1.0V)
V
V
Small-signal Characteristics
Current-Gain-Bandwidth Product
(IC= -10mA, VCE= -5.0VDC, f=100MHz)
Output Capacitance
(VCB= -10V, f=1.0MHz)
fT
Cobo
100
-
-
10
-
-
MHz
pF
WEITRON
BC807-16/BC807-25
BC807-40
1000
h FE , DC CURRENT GAIN
VCE = -1.0 V
TA = 25 C
100
10
-0.1
-1.0
-10
-100
IC , COLLECTOR CURRENT (mA)
-1000
Figure 1. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOL
TS
)
-1.0
TJ = 25 C
V, VOLTAGE (VOLTS)
-0.8
IC =
-500 mA
-1.0
TA = 25C
-0.8
VBE(sat) @ I C/IB = 10
VBE(on) @ V CE = -1.0 V
-0.6
-0.6
-0.4
IC = -300 mA
-0.2
0
-0.01
IC = -10 mA
-0.1
-1.0
-10
IB , BASE CURRENT (mA)
IC = -100 mA
-0.4
-0.2
VCE(sat) @ I C/IB = 10
-100
0
-1.0
-10
-100
IC , COLLECTOR CURRENT (mA)
-1000
Figure 2. Saturation Region
Figure 3.
"
On
"
Voltages
q
V , TEMPERA TURE COEFFICIENTS (mV/ C)
+1.0
VC for VCE(sat)
C, CAPACITANCE (pF)
100
0
-1.0
-2.0
VB for VBE
-1.0
Figure 4. T emperature Coefficients
WEITRON
http://www.weitron.com.tw
q
q
Cib
10
Cob
-10
-100
I
C
, COLLECTOR CURRENT
-1000
1.0
-0.1
-1.0
-10
VR , REVERSE VOLTAGE (VOLTS)
-100
Figure 5. Capacitances
BC807-16/BC807-25
BC807-40
SOT-23 Package Outline Dimension
S OT -23
A
TOP VIEW
D
E
G
H
B
C
K
J
L
M
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
WEITRON
http://www.weitron.com.tw
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