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2SJ355-T2-AZ

Description
2SJ355-T2-AZ
CategoryDiscrete semiconductor    The transistor   
File Size263KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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2SJ355-T2-AZ Overview

2SJ355-T2-AZ

2SJ355-T2-AZ Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it Rohs certified?conform to
Parts packaging codePOMM
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Manufacturer packaging codePLZZ0004CC-A3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)2 A
Maximum drain current (ID)2 A
Maximum drain-source on-resistance0.6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)2 W
Maximum pulsed drain current (IDM)4 A
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.

2SJ355-T2-AZ Related Products

2SJ355-T2-AZ 2SJ355-T1-AZ 2SJ355-AZ 2SJ355(0)-T1-AY 2SJ355-T1 2SJ355-T2 2SJ355-AY 2SJ355-T2-AY 2SJ355
Description 2SJ355-T2-AZ 2SJ355-T1-AZ 2SJ355-AZ 2SJ355(0)-T1-AY 2SJ355-T1 2SJ355-T2 TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,2A I(D),TO-243 TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,2A I(D),TO-243 2A, 30V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, PACKAGE-3
Reach Compliance Code compli compli compli compli unknow unknow compli compli unknow
Base Number Matches 1 1 1 1 1 1 1 1 1
Is it Rohs certified? conform to conform to conform to conform to - - conform to conform to incompatible
Contacts 3 3 3 3 - - - - 3
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - - - Single Single SINGLE WITH BUILT-IN DIODE
Maximum drain current (Abs) (ID) 2 A 2 A 2 A - - - 2 A 2 A 2 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - - - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE - - - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C - - - 150 °C 150 °C 150 °C
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED 260 NOT SPECIFIED - - - - NOT SPECIFIED
Polarity/channel type P-CHANNEL P-CHANNEL P-CHANNEL - - - P-CHANNEL P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) 2 W 2 W 2 W - - - 2 W 2 W 2 W
surface mount YES YES YES - - - YES YES YES
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - - - - NOT SPECIFIED

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