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BC848

Description
100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size475KB,9 Pages
ManufacturerWeitron Technology
Websitehttp://weitron.com.tw/
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BC848 Overview

100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BC848 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current0.1000 A
Maximum Collector-Emitter Voltage30 V
Processing package descriptionSurface mount, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
Transistor component materialssilicon
Maximum ambient power consumption0.2500 W
Transistor typeUniversal small signal
Minimum DC amplification factor110
Rated crossover frequency100 MHz
BC846BPDW Series
NPN/PNP Dual General Purpose Transistors
P b
Lead(Pb)-Free
3
2
1
6 5
4
1
4
5
6
2
3
NPN+PNP
SOT-363(SC-88)
MAXIMUM RATINGS - NPN
Rating
Collector
-
Emitter Voltage
Collector
-
Base Voltage
Emitter
-
Base Voltage
Collector Current - Continuous
Symbol
VCEO
VCBO
VEBO
IC
BC846
65
80
6.0
100
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
MAXIMUM RATINGS - PNP
Rating
Collector
-
Emitter Voltage
Collector
-
Base Voltage
Emitter
-
Base Voltage
Collector Current - Continuous
Symbol
VCEO
VCBO
VEBO
IC
BC846
BC847
BC848
Unit
V
V
V
mAdc
-
65
-
80
-
5.0
-
100
-
45
-
50
-
5.0
-
100
-
30
-
30
-
5.0
-
100
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR
-
5 Board (1)
TA = 25˚C
Derate Above 25˚C
Thermal Resistance Junction to Ambient
Junction Temperature Range
Storage Temperature Range
1. FR
-
5 = 1.0 x 0.75 x 0.062 in
Symbol
PD
Max
380
250
Unit
mW
3.0
R
θJA
TJ
Tstg
328
-55 to +150
-55 to +150
mW/˚C
˚C/W
˚C
˚C
Device Marking
BC846BPDW = BB , BC847BPDW = 3F , BC847CPDW = 3G , BC848BPDW = 13K , BC848CPDW = 13L
WEITRON
http://www.weitron.com.tw
1/9
09-Oct-08

BC848 Related Products

BC848 BC846
Description 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
Number of terminals 3 3
Transistor polarity NPN NPN
Maximum collector current 0.1000 A 0.1000 A
Maximum Collector-Emitter Voltage 30 V 65 V
Processing package description Surface mount, 3 PIN PLASTIC PACKAGE-3
Lead-free Yes Yes
EU RoHS regulations Yes Yes
state ACTIVE ACTIVE
packaging shape Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
terminal coating MATTE Tin tin
Terminal location pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy
structure single single
Number of components 1 1
Transistor component materials silicon silicon
Maximum ambient power consumption 0.2500 W 0.2500 W
Transistor type Universal small signal Universal small signal
Minimum DC amplification factor 110 110
Rated crossover frequency 100 MHz 100 MHz
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