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BSS138W

Description
300 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size251KB,5 Pages
ManufacturerWeitron Technology
Websitehttp://weitron.com.tw/
Download Datasheet Parametric View All

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BSS138W Overview

300 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

BSS138W Parametric

Parameter NameAttribute value
MakerWeitron Technology
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage50 V
Maximum drain current (ID)0.2 A
Maximum drain-source on-resistance3.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)5 pF
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
BSS138W
N-Channel POWER MOSFET
P b
Lead(Pb)-Free
1
2
3
DRAIN
3
Description:
1
GATE
* Typical applications are dc–dc converters,
power management in portable and battery–powered
products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
SOT-323(SC-70)
2
SOURCE
Features:
* Simple Drive Requirement
* Small Package Outline
Maximum Ratings
(T
A
=25°C Unless Otherwise Specified)
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V
GS
= (T
A
=25°C)
Pulsed Drain Current (tp ≤ 10µS)
Power Dissipation (T
A
=25°C)
Maximax Junction-to-Ambient
Operating Junction Temperature Range
Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R θ
JA
T
J
Tstg
T
L
Value
50
±20
200
800
150
556
+150
-55 to +150
260
Unit
V
V
mA
mA
mW
°C/W
°C
°C
°C
Device Marking
BSS138W = J1
WEITRON
http://www.weitron.com.tw
1/5
10-Apr-06
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