The SGL-0622Z is a low noise, high gain MMIC LNA designed for low power
single-supply operation from 2.7-3.6V. Its Class-1C ESD protection and high
input overdrive capability ensures rugged performance, while its integrated
active bias circuit maintains robust stable bias over temperature and
process beta variation. The SGL-0622Z is internally matched from 5-4000
MHz and requires only 4-5 external biasing components (DC blocks, bypass
caps, inductive choke). The SGL-0622Z is fabricated using highly repeat-
able Silicon Germanium technology and is housed in a
cost-effective RoHS/
WEEE compliant QFN 2x2 miniature package.
5 - 4000 MHz Low Noise MMIC Amplifier
Silicon Germanium
Pb
RoHS Compliant
&
Green
Package
Typical Performance
40
35
30
25
4
Gain
3.5
3
Gain (dB)
20
15
10
5
0
100
2
1.5
1
NF
600
1100
1600
2100
2600
3100
0.5
0
NF (dB)
2.5
Product Features
•
High Gain = 28dB @ 1575MHz
•
Low Noise Figure = 1.5dB @ 1575MHz
•
Low Power Consumption, 10.5mA @ 3.3V
•
Battery Operation: 2.7-3.6V (Active Biased)
•
Fully Integrated Matching
•
Class-1C ESD Protection (>1000V HBM)
•
High input overdrive capability, +18dBm
•
RoHS/WEEE Compliant Miniature 2x2 QFN Package
Applications
•
High Gain GPS Receivers
•
ISM & WiMAX LNAs
Frequency
Min.
Typ.
Max.
Frequency (MHz)
Symbol
Parameters
Units
S
21
Small Signal Gain
dB
1.575 GHz
2.44 GHz
3.5 GHz
1.575 GHz
2.44 GHz
3.5 GHz
1.575 GHz
2.44 GHz
3.5 GHz
1.575 GHz
2.44 GHz
3.5 GHz
1.575 GHz
2.44 GHz
3.5 GHz
1.575 GHz
2.44 GHz
3.5 GHz
0.05 - 4 GHz
25
14.5
28
23
16.5
1.5
2
2.8
31
18.5
1.9
NF
Noise Figure
dB
3.3
P
1dB
Output Power at 1dB Compression
dBm
5.3
1.5
-1.4
-13
-12
-8.5
14.3
12.0
10.0
-16
IIP
3
Input Third Order Intercept Point
dBm
12
IRL
Input Return Loss
dB
6
9.5
14.0
22.0
-28
10.5
150
ORL
S12
I
D
R
TH
, j-l
Test Conditions:
Output Return Loss
Reverse Isolation
Operating Current
Thermal Resistance (junction - lead)
V
CC
= 3.3V
T
L
= 25°C
I
D
= 10.5mA Typ.
Z
S
= Z
L
= 50 Ohms
dB
dB
mA
°C/W
7.5
12.5
IIP
3
Tone Spacing = 1MHz, Pout per tone = -15 dBm
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2007 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-104519 Rev E
SGL-0622Z 5-4000 MHz SiGe Low Noise Amplifier
Typical RF Performance at Key Operating Frequencies (With Application Circuit)
Frequency (MHz)
450
850
34.4
32.8
Symbol
S
21
IIP
3
P
1dB
S
11
S
22
S
12
NF
Parameter
Small Signal Gain
Input Third Order Intercept Point
Output at 1dB Compression
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
V
CC
= 3.3V
T
L
= 25°C
Unit
dB
dBm
dBm
dB
dB
dB
dB
100
34.6
200
34.9
1575
28.5
-13.0
5.3
14.3
9.5
35.6
1.50
1950
26.1
2440
23.0
-12.0
1.5
12.0
14.0
32.0
2.01
3500
17.0
-8.5
-1.4
10.0
22.0
29.0
2.81
15.1
9.2
38.8
1.25
20.0
12.2
39.8
0.96
12.6
11.8
38.7
0.84
16.0
10.4
39.9
1.16
12.8
12.1
34.8
1.78
Test Conditions:
I
D
= 10.5 mA Typ.
Z
S
= Z
L
= 50 Ohms
IIP
3
Tone Spacing = 1MHz, Pout per tone = -15 dBm
Absolute Maximum Ratings
Reliability & Qualification Information
Parameter
ESD Rating - Human Body Model (HBM)
Moisture Sensitivity Level
Rating
Class 1C
MSL 1
Parameter
Max Device Current (I
D
)
Max Device Voltage (V
D
)
Max. RF Input Power* (See Note)
Max. Junction Temp. (T
J
)
Absolute Limit
20mA
4V
+18 dBm
+150°C
-40°C to +85°C
+150°C
This product qualification report can be downloaded at www.sirenza.com
Noise Figure vs. Frequency
4
3.5
3
2.5
25C
85C
Operating Temp. Range (T
L
)
Max. Storage Temp.
*Note:
Load condition 1, Z
L
= 50 Ohms
Load condition 2, ZL = 10:1 VSWR
2
1.5
1
0.5
0
1.5
2
2.5
3
3.5
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating values
specified in the table on page one.
Bias Conditions should also satisfy the following expression:
T
L
=T
LEAD
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l
dB
Caution: ESD sensitive
Frequency (GHz)
Appropriate precautions in handling, packaging
and testing devices must be observed.
-6
-8
-10
IIP
3
vs. Frequency
10
8
6
P1dB vs. Frequency
25C
-40C
85C
P1dB (dBm)
3.5
IIP
3
(dBm)
-12
-14
-16
-18
-20
1.5
2
2.5
3
25C
-40C
85C
4
2
0
-2
-4
1.5
2
2.5
3
3.5
Frequency (GHz)
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
Frequency (GHz)
http://www.sirenza.com
EDS-104519 Rev E
SGL-0622Z 5-4000 MHz SiGe Low Noise Amplifier
Application Circuit Data, V
CC
= 3.3V, I
D
= 9mA
IM3 vs. Frequency
-35
-40
25C
-45
-40C
85C
20
18
16
14
12
25C
-40C
85C
DCIV over Temperature
IM3 (dBc)
-50
-55
-60
-65
-70
1.5
Id (mA)
2
2.5
3
3.5
10
8
6
4
2
0
0
1
2
3
4
Frequency (GHz)
Vd (V)
S11 vs. Frequency
0
-5
-10
S21 vs. Frequency
40
35
30
25
dB
20
15
10
5
0
4
S21_25C
S21_-40C
S21_85C
dB
-15
-20
-25
-30
0
1
2
Frequency (GHz)
3
S11_25C
S11_-40C
S11_85C
0
0.5
1
1.5
2
2.5
3
3.5
4
Frequency (GHz)
S22 vs. Frequency
0
S22_25C
S22_-40C
S22_85C
S12 vs. Frequency
0
-10
-20
dB
-30
-40
-50
0
0.5
1
1.5
2
Frequency (GHz)
2.5
3
3.5
4
S12_25C
S12_-40C
S12_85C
-5
-10
dB
-15
-20
-25
-30
0
0.5
1
1.5
2
2.5
Frequency (GHz)
3
3.5
4
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-104519 Rev E
SGL-0622Z 5-4000 MHz SiGe Low Noise Amplifier
Application Schematic
Vs
1uF
1200
pF
100pF
2
4
RF in
100pF
Epad
SGL-0622Z
68nH
1
RF out
100pF
Evaluation Board Layout
Bill of Materials
C1
C2
C3
C4
C5
1x TAJB105KLRH Rohm 1.0uF
1x MCH185C122KK Rohm 1200pF
1x MCH185A101JK Rohm 100pF
1x MCH185A101JK Rohm 100pF
1x MCH185A101JK Rohm 100pF
L1
1x LL1608-FS56NJ Toko 68nH
Connectors 2x PSF-S01-1mm GigaLane Co.
Heat sink
EEF-102059
PCB
QFN2x2
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
4
+
http://www.sirenza.com
EDS-104519 Rev E
SGL-0622Z 5-4000 MHz SiGe Low Noise Amplifier
Pin #
1
2
3,5,6,7,8
4
Function
RF OUT/V
D
GND
N/A
RF IN
Description
RF output and bias pin. Bias should be supplied to this pin through an external RF choke.
(See application circuit)
Connect to ground per application circuit drawing.
Not Used
RF input pin. This pin requires the use of an external DC blocking capacitor as shown in the
application schematics.
Exposed area on the bottom side of the package needs to be soldered to the ground plane of
the board for thermal and RF performance. Vias should be located under the EPAD as shown
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