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2SJ356-T1-AZ

Description
2SJ356-T1-AZ
CategoryDiscrete semiconductor    The transistor   
File Size264KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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2SJ356-T1-AZ Overview

2SJ356-T1-AZ

2SJ356-T1-AZ Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it Rohs certified?conform to
Parts packaging codePOMM
package instruction,
Contacts3
Manufacturer packaging codePLZZ0004CC-A3
Reach Compliance Codecompli
Factory Lead Time1 week
ConfigurationSingle
Maximum drain current (Abs) (ID)2 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum operating temperature150 °C
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)2 W
surface mountYES
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
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