ZXTP25020DZ
20V PNP high gain transistor in SOT89
Summary
BV
CEO
> -20V
BV
ECO
> -4V
I
C(cont)
= 5A
V
CE(sat)
< -65mV @ -1A
R
CE(sat)
= 39m
P
D
= 2.4W
Complementary part number ZXTN25020DZ
Description
Packaged in the SOT89 outline this new low saturation 20V PNP
transistor offers extremely low on state losses making it ideal for use
in DC-DC circuits and various driving and power management
functions
C
B
Features
•
•
•
•
High peak current
Low saturation voltage
High gain
SOT89 package
E
Applications
•
•
•
•
•
DC-DC converters
Load switch
Motor drive
Disconnect switch
MOSFET and IGBT gate drive
E
C
C
B
Pinout - top view
Ordering information
Device
ZXTP25020DZTA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
1000
Device marking
•
1L5
Issue 1- December 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com
ZXTP25020DZ
Absolute maximum ratings
Parameter
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage (reverse blocking)
Emitter-Base voltage
Continuous Collector current
(c)
Base current
Peak pulse current
Power dissipation at T
A
=25°C
(a)
Linear derating factor
Power dissipation at T
A
=25°C
(b)
Linear derating factor
Power dissipation at T
A
=25°C
(c)
Linear derating factor
Power dissipation at T
A
=25°C
(d)
Linear derating factor
Power dissipation at T
C
=25°C
(e)
Linear derating factor
Operating and storage temperature range
T
j
, T
stg
P
D
P
D
P
D
P
D
Symbol
V
CBO
V
CEO
V
ECO
V
EBO
I
C
I
B
I
CM
P
D
Limit
-25
-20
-4
-7
-5
-1
-10
1.1
8.8
1.8
14.4
2.4
19.2
4.46
35.7
15.7
126
-55 to 150
Unit
V
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient
(a)
Junction to ambient
(b)
Junction to ambient
(c)
Junction to ambient
(d)
Junction to case
(e)
Symbol
R
JA
R
JA
R
JA
R
JA
R
JC
Limit
117
68
51
28
7.95
Unit
°C/W
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(d) As (c) above measured at t<5 seconds.
(e) Junction to case (collector tab). Typical.
Issue 1- December 2007
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2
www.zetex.com
ZXTP25020DZ
Thermal characteristics
Issue 1- December 2007
© Zetex Semiconductors plc 2007
3
www.zetex.com
ZXTP25020DZ
Thermal characteristics
Issue 1- December 2007
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4
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ZXTP25020DZ
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Collector-Base breakdown
voltage
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Base breakdown
voltage
Collector-Base cut-off
current
Emitter cut-off current
Collector-Emitter
saturation voltage
Symbol
BV
CBO
BV
CEO
BV
ECX
BV
ECO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
Min.
-25
-20
-4
Typ.
-55
-45
-8.5
Max.
Unit
V
V
V
Conditions
I
C
= -100μA
I
C
= -10mA
(*)
I
E
= -100μA, R
BC
< 1kΩ or
0.25V > V
BC
> -0.25V
I
E
= -100μA
I
E
= -5.6V
V
CB
= -25V
V
CB
= -25V, T
amb
=100°C
V
EB
= -5.6V
I
C
= -1A, I
B
= -100mA
(*)
I
C
= -1A, I
B
= -10mA
(*)
I
C
= -2A, I
B
= -40mA
(*)
I
C
= -5A, I
B
= -500mA
(*)
I
C
= -5A, I
B
= -500mA
(*)
I
C
= -5A, V
CE
= -2V
(*)
I
C
= -10mA, V
CE
= -2V
(*)
I
C
= -1A, V
CE
= -2V
(*)
I
C
= -5A, V
CE
= -2V
(*)
I
C
= -10A, V
CE
= -2V
(*)
MHz
400
30
pF
pF
ns
ns
ns
ns
V
CC
= -10V, I
C
= -1A,
I
B1
= -I
B2
= -50mA
I
C
= -50mA, V
CE
= -10V
f = 100MHz
V
EB
= -0.5V, f = 1MHz
(*)
V
CB
= -10V, f = 1MHz
(*)
-4
-7
-8.5
-8.3
<1
<1
-50
-150
-185
-195
-1010
-870
-50
-0.5
-50
-65
-215
-245
-265
-1100
-1000
900
V
V
nA
μA
nA
mV
mV
mV
mV
mV
mV
Base-Emitter saturation
voltage
Base-Emitter turn-on
voltage
Static forward current
transfer ratio
V
BE(sat)
V
BE(on)
h
FE
300
200
45
450
310
85
20
290
157
21
14.2
16.3
186
32.7
Transition frequency
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
f
T
C
ibo
C
obo
t
d
t
r
t
s
t
f
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤
300µs; duty cycle
≤
2%.
Issue 1- December 2007
© Zetex Semiconductors plc 2007
5
www.zetex.com
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