A Product Line of
Diodes Incorporated
ZXTP25040DFL
40V PNP LOW POWER TRANSISTOR IN SOT23
Features
•
•
•
•
•
•
•
•
•
•
BV
CEO
> -40V
BV
ECO
> --3V
I
C
= -1.5A Continuous Collector Current
V
CE(sat)
< -115mV @ -1A
R
CE(sat)
= 82m
High Peak Current
Complementary Part Number ZXTN25040DFL
040DFL
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Q101
Mechanical Data
•
•
•
•
•
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
94V
Moisture Sensitivity: Level 1 per J-STD-020
sitivity:
J
Terminals: Finish – Matte Tin Plated Leads, Solderable per
S
MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
Applications
•
•
MOSFET and IGBT Gate Driving
riving
DC-DC Converters
SOT23
C
B
E
Top View
Device Symbol
Top View
Pin-Out
Out
Ordering Information
(Note 4)
Product
ZXTP25040DFLTA
Notes:
Marking
1A2
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
Hal
and Lead-free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
bromine,
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
http://www.diodes.com/products/packages.html.
Marking Information
1A2
1G5
1A2 = Product Type Marking Code
ZXTP25040DFL
Document Number: DS33754 Rev. 4 - 2
1 of 7
www.diodes.com
March 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP25040DFL
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage (Forward Blocking)
Emitter-collector voltage (Reverse Blocking)
Emitter-Base Voltage
Continuous Collector Current (Note 5)
Base Current
Peak Pulse Current
Symbol
V
CBO
V
CEO
V
ECO
V
EBO
I
C
I
B
I
CM
Value
-45
-40
-3
-7
-1.5
-500
-5
Unit
V
V
V
V
A
mA
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 7)
Symbol
P
D
R
θJA
R
θJL
T
J,
T
STG
Value
310
350
403
357
350
-55 to +150
Unit
mW
°
C/W
°
C/W
°
C
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 15 mm x 15mm 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the leads).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTP25040DFL
Document Number: DS33754 Rev. 4 - 2
2 of 7
www.diodes.com
March 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP25040DFL
Thermal Characteristics and Derating Information
Max Power Dissipation (W)
-I
C
Collector Current (A)
10
V
CE(sat)
Limited
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
20
40
1
DC
1s
100ms
10ms
Single Pulse
T
amb
=25°
C
1ms
100µs
100m
10m
1m
100m
-V
CE
Collector-Emitter Voltage (V)
1
10
Temperature (°
C)
60
80
100 120 140 160
Safe Operating Area
400
360
T
amb
=25°C
320
280
240
200
D=0.5
160
120
D=0.2
80
40
0
100µ 1m 10m 100m
Derating Curve
Thermal Resistance (°
C/W)
100
Maximum Power (W)
Single Pulse
T
amb
=25°
C
10
Single Pulse
D=0.05
D=0.1
1
100µ
1m
10m 100m
1
10
100
1k
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ZXTP25040DFL
Document Number: DS33754 Rev. 4 - 2
3 of 7
www.diodes.com
March 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP25040DFL
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Static Forward Current Transfer Ratio (Note 9)
Symbol
BV
CBO
BV
CEO
BV
EBO
BV
ECO
I
CBO
I
EBO
h
FE
Min
-45
-40
-7
-3
-
-
-
300
120
15
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-75
-65
-8.2
-8.7
< -1
-
< -1
450
200
40
-75
-200
-95
-160
-245
-915
-825
17.4
270
34
41
266
53
Max
-
-
-
-
-50
-20
-50
900
-
-
-95
-290
-115
-190
-300
-1000
-900
25
-
-
-
-
-
Unit
V
V
V
V
nA
µA
nA
-
Test Condition
I
C
= -100µA
I
C
= -10mA
I
E
= -100µA
I
E
= -100µA
V
CB
= -36V
V
CB
= -36V, T
amb
= +100°
C
V
EB
= -5.6V
I
C
= -10mA, V
CE
= -2V
I
C
= -1.5A, V
CE
= -2V
I
C
= -3A, V
CE
= -2V
I
C
= -0.5A, I
B
= -20mA
I
C
= -1A, I
B
= -20mA
I
C
= -1A, I
B
= -100mA
I
C
= -1.5A, I
B
= -75mA
I
C
= -3A, I
B
= -300mA
I
C
= -1.5A, I
B
= -75mA
I
C
= -1.5A, V
CE
= -2V
V
CB
= -10V, f = 1MHz
V
CE
= -10V, I
C
= -50mA,
f = 50MHz
V
CC
= -15V, I
C
= -750mA,
I
B1
= -I
B2
= -15mA
Collector-Emitter Saturation Voltage (Note 9)
V
CE(sat)
mV
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Output Capacitance
Transition Frequency
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
V
BE(sat)
V
BE(on)
C
obo
f
T
t
(d)
t
(r)
t
(s)
t
(f)
mV
mV
pF
MHz
ns
ns
ns
ns
9. Measured under pulsed conditions. Pulse width
≤
300 µs. Duty cycle
≤
2%.
ZXTP25040DFL
Document Number: DS33754 Rev. 4 - 2
4 of 7
www.diodes.com
March 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP25040DFL
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
1
Tamb=25°C
I
C
/I
B
=100
0.4
I
C
/I
B
=10
0.3
- V
CE(SAT)
(V)
100m
I
C
/I
B
=50
I
C
/I
B
=20
I
C
/I
B
=10
- V
CE(SAT)
(V)
0.2
150°C
100°C
25°C
-55°C
0.1
10m
1m
10m
100m
- I
C
Collector Current (A)
1
10
0.0
10m
- I
C
Collector Current (A)
100m
1
V
CE(SAT)
v I
C
1.6
150°C
1.4
1.2
1.0
0.8
0.6
0.4
-55°C
0.2
0.0
1m
25°C
100°C
V
CE
=2V
V
CE(SAT)
v I
C
800
700
1.0
I
C
/I
B
=10
-55°C
25°C
- V
BE(SAT)
(V)
600
500
400
300
200
100
Typical Gain (h
FE
)
Normalised Gain
0.8
0.6
100°C
150°C
0.4
1m
- I
C
Collector Current (A)
10m
100m
1
0
10
- I
C
Collector Current (A)
10m
100m
1
10
h
FE
v I
C
1.2
V
CE
=2V
V
BE(SAT)
v I
C
1.0
-55°C
- V
BE(ON)
(V)
25°C
0.8
0.6
150°C
0.4
1m
10m
100m
100°C
- I
C
Collector Current (A)
1
10
V
BE(ON)
v I
C
ZXTP25040DFL
Document Number: DS33754 Rev. 4 - 2
5 of 7
www.diodes.com
March 2015
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
