ZXTP25100CZ
100V PNP MEDIUM POWER TRANSISTOR IN SOT89
Features
BV
CEO
> -100V
BV
ECO
> -7V
I
C
= -1A Continuous Collector Current
I
CM
= -3A Peak Collector Current
V
CE(SAT)
< -225mV @ -1A
R
CE(SAT)
= 155mΩ for a Low Equivalent On-Resistance
Complementary NPN Type: ZXTN25100DZ
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT89
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads. Solderable per
MIL-STD-202, Method 208
Weight: 0.05 grams (Approximate)
SOT89
C
E
B
C
C
B
E
Top View
Device Symbol
Top View
Pin Out
Ordering Information
(Note 4)
Product
ZXTP25100CZTA
Notes:
Compliance
AEC-Q101
Marking
1L7
Reel Size (inches)
7
Tape Width (mm)
12
Quantity per Reel
1,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
1L7
1L7 = Product Type Marking Code
ZXTP25100CZ
Da
tasheet Number: DS33759 Rev. 2 - 2
1 of 8
www.diodes.com
April 2016
© Diodes Incorporated
ZXTP25100CZ
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Collector Voltage (Reverse Blocking)
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V
CBO
V
CEO
V
ECO
V
EBO
I
C
I
CM
I
B
Limit
-115
-100
-7
-7
-1
-3
-500
Unit
V
V
V
V
A
A
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
(Note 5)
Power Dissipation
Linear Derating Factor
(Note 6)
P
D
(Note 7)
(Note 8)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
Symbol
Value
1.1
8.8
1.8
14.4
2.4
19.2
4.46
35.7
117
68
51
28
7.95
-55 to +150
°C
Unit
W
mW/°C
Thermal Resistance, Junction to Ambient Air
R
θJA
°C/W
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
R
θJL
T
J,
T
STG
ESD Ratings
(Note 10)
Characteristic
Electrostatic Discharge – Human Body Model
Electrostatic Discharge – Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 0.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper.
7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper.
8. Same as Note 7, except the device is measured at t<5 seconds.
9. Thermal resistance from junction to solder-point (on the exposed collector pad).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTP25100CZ
Da
tasheet Number: DS33759 Rev. 2 - 2
2 of 8
www.diodes.com
April 2016
© Diodes Incorporated
ZXTP25100CZ
Thermal Characteristics and Derating Information
Limited
Max Power Dissipation (W)
-I
C
Collector Current (A)
V
CE(sat)
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0
15mmx15mm FR4,
1oz Cu
50mmx50mm FR4,
2oz Cu
25mmx25mm FR4,
2oz Cu
1
DC
1s
100ms
Single Pulse
T
amb
=25°C
10ms
1ms 100µs
100m
10m
100m
50mmx50mm FR4, 2oz Cu
1
10
100
20
40
60
80
100 120 140 160
-V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
ZXTP25100CZ
Da
tasheet Number: DS33759 Rev. 2 - 2
3 of 8
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April 2016
© Diodes Incorporated
ZXTP25100CZ
Thermal Characteristics and Derating Information
(Continued)
Thermal Resistance (°C/W)
120
100
80
D=0.5
15mmx15mm
FR4, 1oz Cu
100
Maximum Power (W)
T
amb
=25°C
Single Pulse
T
amb
=25°C,
15mmx15mm
FR4, 1oz Cu
60
40
20
0
100µ
1m
10m 100m
1
10
D=0.2
Single Pulse
D=0.05
D=0.1
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Thermal Resistance (°C/W)
100
60
50
40
D=0.5
30
20
D=0.2
10
D=0.1
Single Pulse
D=0.05
25mmx25mm
FR4, 2oz Cu
Pulse Power Dissipation
Maximum Power (W)
70
T
amb
=25°C
Single Pulse
T
amb
=25°C,
25mmx25mm
FR4, 2oz Cu
10
0
100µ
1m
10m 100m
1
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Thermal Resistance (°C/W)
100
50mmx50mm
FR4, 2oz Cu
Pulse Power Dissipation
Maximum Power (W)
50
40
30
20
10
0
100µ
T
amb
=25°C
Single Pulse
T
amb
=25°C,
50mmx50mm
FR4, 2oz Cu
D=0.5
10
D=0.2
Single Pulse
D=0.05
D=0.1
1m
10m 100m
1
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ZXTP25100CZ
Da
tasheet Number: DS33759 Rev. 2 - 2
4 of 8
www.diodes.com
April 2016
© Diodes Incorporated
ZXTP25100CZ
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Collector Breakdown Voltage
(reverse blocking)
Emitter-Collector Breakdown Voltage
(Reverse Blocking)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter Cutoff Current
Symbol
BV
CBO
BV
CEO
BV
ECX
BV
ECO
BV
EBO
I
CBO
I
CEX
I
EBO
Min
-115
-100
-7
-7
-7
—
—
—
200
180
110
20
Typ
-180
-140
-8.3
-8.8
-8.4
<-1
—
<1
350
320
190
35
-140
-80
-180
-155
-860
-800
180
153
—
—
—
—
—
14.1
15.8
41
411
89
Max
—
—
—
—
—
-50
-0.5
-100
-50
500
—
—
—
-210
-115
-315
-225
-950
-900
—
—
20
—
—
—
—
Unit
V
V
V
V
V
nA
µA
nA
nA
Test Condition
I
C
= -100µA
I
C
= -10mA
I
E
= -100µA, R
BC
<1kΩ or
-0.25V > V
BC
> 0.25V
I
E
= -100µA
I
E
= -100µA
V
CB
= -115V
V
CB
= -115V, T
A
= +100°C
V
CE
= -90V, R
BE
<1kΩ or
-0.25V < V
BE
< 1V
V
EB
= -5.6V
I
C
= -10mA, V
CE
= -2V
I
C
= -100mA, V
CE
= -2V
I
C
= -500mA, V
CE
= -2V
I
C
= -1A, V
CE
= -2V
I
C
= -100mA, I
B
= -1mA
I
C
= -500mA, I
B
= -50mA
I
C
= -500mA, I
B
= -20mA
I
C
= -1A, I
B
= -100mA
I
C
= -1A, I
B
= -100mA
I
C
= -1A, V
CE
= -2V
I
E
= -20mA, V
CE
= -15V
f = 100MHz
V
EB
= -0.5V, f = 1MHz,
V
CB
= -10V, f = 1MHz,
I
C
= -500mA, V
CC
= -10V,
I
B1
= -I
B2
= -50mA
DC current transfer Static ratio (Note 11)
h
FE
—
Collector-Emitter Saturation Voltage (Note 11)
V
CE(SAT)
—
mV
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
Transitional Frequency
Input Capacitance
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Note:
V
BE(SAT)
V
BE(ON)
f
T
C
IBO
C
OBO
t
D
t
R
t
S
t
F
—
—
—
mV
mV
MHz
pF
pF
ns
ns
ns
ns
11. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
ZXTP25100CZ
Da
tasheet Number: DS33759 Rev. 2 - 2
5 of 8
www.diodes.com
April 2016
© Diodes Incorporated
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