2SJ357-T2-AZ datasheet, PDF - EEWORLD Datasheet

2SJ357-T2-AZ: Description3000mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, COMPACT, MP-2, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size165KB，4 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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2SJ357-T2-AZ Overview

3000mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, COMPACT, MP-2, 3 PIN

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PSSO-F3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	3 A
Maximum drain-source on-resistance	0.35 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-F3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	2SJ357-T2-AZ
Description	3000mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, COMPACT, MP-2, 3 PIN
package instruction	SMALL OUTLINE, R-PSSO-F3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	3 A
Maximum drain-source on-resistance	0.35 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-F3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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