IDT70105L35JG8 datasheet, PDF - EEWORLD Datasheet

IDT70105L35JG8: DescriptionMulti-Port SRAM, 1KX9, 35ns, CMOS, PQCC52, PLASTIC, LCC-52; Categorystorage storage; File Size421KB，15 Pages; ManufacturerIDT (Integrated Device Technology); Environmental Compliance

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IDT70105L35JG8 Overview

Multi-Port SRAM, 1KX9, 35ns, CMOS, PQCC52, PLASTIC, LCC-52

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	IDT (Integrated Device Technology)
Parts packaging code	LCC
package instruction	PLASTIC, LCC-52
Contacts	52
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	35 ns
JESD-30 code	S-PQCC-J52
JESD-609 code	e3
length	19.1262 mm
memory density	9216 bit
Memory IC Type	MULTI-PORT SRAM
memory width	9
Number of functions	1
Number of ports	2
Number of terminals	52
word count	1024 words
character code	1000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1KX9
Output characteristics	3-STATE
Exportable	YES
Package body material	PLASTIC/EPOXY
encapsulated code	QCCJ
Package shape	SQUARE
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum seat height	4.57 mm
Minimum standby current	2 V
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	MATTE TIN
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	30
width	19.1262 mm

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