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DTC123EE

Description
Bias Resistor Transistor NPN Silicon
CategoryDiscrete semiconductor    The transistor   
File Size404KB,13 Pages
ManufacturerWeitron Technology
Websitehttp://weitron.com.tw/
Download Datasheet Parametric View All

DTC123EE Overview

Bias Resistor Transistor NPN Silicon

DTC123EE Parametric

Parameter NameAttribute value
MakerWeitron Technology
package instruction,
Reach Compliance Codeunknow
DTC114EE Series
Bias Resistor Transistor NPN Silicon
P b
Lead(Pb)-Free
1
BASE
R1
R2
3
COLLECTOR
3
1
2
2
EMITTER
SC-89
(SOT-523F)
Maximum Ratings
(T
A
=25°C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current-Continuous
Symbol
V
CEO
V
CBO
I
C
Value
50
50
100
Unit
V
V
mA
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
FR-4 Board
(1)
T
A
=25˚C
Derate above 25˚C
Thermal Resistance, Junction to Ambient
(1)
Total Device Dissipation FR-5 Board
FR-4 Board
(2)
T
A
=25˚C
Derate above 25˚C
Thermal Resistance, Junction to Ambient
(2)
Junction Temperature Range
Storage Temperature Range
1.FR-4 @ Minimum pad
2.FR-4 @1.0 x 1.0 Inch pad
Symbol
P
D
R
θJA
P
D
R
θJA
T
J
Tstg
Max
200
1.6
600
300
2.4
400
-55 to +150
-55 to +150
Unit
mW
mW/ ˚C
˚C/W
mW
mW/ ˚C
˚C/W
˚C
˚C
Device Marking and ResistorValues
Device
DTC114EE
DTC124EE
DTC144EE
DTC114YE
DTC114TE
DTC143TE
Marking
8A
8B
8C
8D
94
03
R1(K)
10
22
47
10
10
4.7
R2(K)
10
22
47
47
8 8
Device
DTC123EE
DTC143EE
DTC143ZE
DTC124XE
DTC123JE
DTC115EE
DTC144WE
Marking
8H
8J
8K
8L
8M
8N
8P
R1(K)
2.2
4.7
4.7
22
2.2
100
47
R2(K)
2.2
4.7
47
47
47
100
22
W E IT R O N
h t t p : / / w w w . w e i t r o n . c o m . tw
1/13
Rev.A 29-Jul-08
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