2SC5376FV datasheet, PDF - EEWORLD Datasheet

2SC5376FV

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5376FV

Audio Frequency General Purpose Amplifier Applications

For Muting and Switching Applications

0.22±0.05

1.2±0.05

0.8±0.05

0.32±0.05

0.13±0.05

Unit: mm

•

Low Collector Saturation Voltage:

V

CE (sat) (1)

= 15 mV (typ.)

@I

C

= 10 mA/I

B

= 0.5 mA

0.8±0.05

1.2±0.05

0.4

High Collector Current: I

C

= 400 mA (max)

1

2

3

Maximum Ratings

(Ta = 25°C)

Characteristics

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power dissipation

Junction temperature

Storage temperature range

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

B

P

C

T

j

T

stg

Rating

15

12

5

400

50

150 *

150

−55~150

Unit

V

mA

mW

°C

0.5±0.05

VESM

1.BASE

2.EMITTER

3.COLLECTOR

JEDEC

JEITA

TOSHIBA

―

2-1L1A

* : Mounted on FR4 board (25.4 mm

×

25.4 mm

×

1.6mmt)

Weight: 0.0015g (typ.)

0.5mm

0.45mm

0.4mm

Marking

Type Name

h

FE

Classification

FA

1

2004-06-07

2SC5376FV

Electrical Characteristics

(Ta = 25°C)

Characteristics

Collector cut-off current

Emitter cut-off current

DC current gain

Symbol

I

CBO

I

EBO

h

FE

(Note)

V

CE (sat) (1)

V

CE (sat) (2)

V

BE (sat)

f

T

C

ob

R

on

t

on

0V

Switching time

Storage time

t

stg

INPUT 300

Ω

10

µs

600

Ω

50

Ω

Test Condition

V

CB

=

15 V, I

E

=

0

V

EB

=

5 V, I

C

=

0

V

CE

=

2 V, I

C

=

10 mA

I

C

=

10 mA, I

B

=

0.5 mA

I

C

=

200 mA, I

B

=

10 mA

I

C

=

200 mA, I

B

=

10 mA

V

CE

=

2 V, I

C

=

10 mA

V

CB

=

10 V, I

E

=

0, f

=

1 MHz

I

B

=

1 mA, V

in

=

1 V

rms

, f

=

1 kHz

OUTPUT

60

Ω

Min

⎯

300

⎯

80

⎯

Typ.

⎯

15

110

0.87

130

4.2

0.9

85

Max

0.1

1000

30

250

1.2

⎯

mV

V

MHz

pF

Ω

ns

Unit

µA

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Collector-emitter on resistance

Turn-on time

V

CC

=

6 V

⎯

170

⎯

ns

V

BB

= −3

V

Falll time

t

f

Duty Cycle

<

2%

=

IB1

= −IB2 =

5 mA

⎯

40

⎯

ns

Note: h

FE

Classification

A: 300 ~ 600, B: 500 ~ 1000

2

2004-06-07

2SC5376FV

I

C

– V

CE

1.0

Common emitter

Ta

=

25°C

0.8

10000

5000

3000

h

FE

– I

C

Common emitter

VCE

=

2 V

(A)

5

4

3

2

h

FE

6

0.6

Collector current I

C

1000

500

300

Ta

=

100°C

25

−25

0.4

1

0.2

IB

=

0.5 mA

0

DC current gain

5

100

50

30

1

2

3

4

10

0.1

0.3

1

3

10

30

100

300

1000

Collector-emitter voltage

V

CE

(V)

Collector current

I

C

(mA)

V

CE (sat)

– I

C

1000

Common emitter

500 IC/IB

=

20

300

50

30

Common emitter

IC/IB

=

20

Ta

=

25°C

V

BE (sat)

– I

C

Collector-emitter saturation voltage

V

CE (sat)

(mV)

Base-emitter saturation voltage

V

BE (sat)

(V)

100

300

10

5

3

100

50

30

Ta

=

100°C

−25

25

10

5

3

1

0.5

0.3

1

0.1

0.3

1

3

10

30

1000

0.1

0.3

1

3

10

30

100

300 500

Collector current

I

C

(mA)

Collector current

I

C

(mA)

I

C

– V

BE

1000

500

300

VCE

=

2V

100

C

ob

– V

CB

IE

=

0 A

f

=

1 MHz

Ta

=

25°C

(pF)

C

ob

Collector output capacitance

Common emitter

50

30

I

C

(mA)

Collector current

100

50

30

Ta

=

100°C

25

−25

10

5

3

10

5

3

1

0.0

0.4

0.8

1.2

1.6

1

0.1

0.3

1

3

10

30

100

Base-emitter voltage

V

BE

(V)

Collector-base voltage

V

CB

(V)

3

2004-06-07

2SC5376FV

P

C

– Ta

(mW)

200

Mounted on FR4 board

(25.4

mm

×

25.4 mm

×

1.6 mmt)

150

COLLECTOR POWER DISSIPATION P

C

100

50

0

25

50

75

100

125

150

175

AMBIENT TEMPERATURE

Ta

(°C)

4

2004-06-07

2SC5376FV

RESTRICTIONS ON PRODUCT USE

•

The information contained herein is subject to change without notice.

030619EAA

•

The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which

may result from its use. No license is granted by implication or otherwise under any patent or patent rights of

TOSHIBA or others.

•

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety

in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such

TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc..

•

The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or

spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this

document shall be made at the customer’s own risk.

•

TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and

sold, under any law and regulations.

5

2004-06-07

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-F3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.4 A
Collector-emitter maximum voltage	12 V
Configuration	SINGLE
Minimum DC current gain (hFE)	300
JESD-30 code	R-PDSO-F3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	130 MHz
Base Number Matches	1

2SC5376FV

2SC5376FV Overview

2SC5376FV Parametric

Preview

Recommended Resources