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2SK1399-AT

Description
TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,100MA I(D),SC-59
CategoryDiscrete semiconductor    The transistor   
File Size241KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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2SK1399-AT Overview

TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,100MA I(D),SC-59

2SK1399-AT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompli
ConfigurationSingle
Maximum drain current (Abs) (ID)0.1 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.2 W
surface mountYES
Base Number Matches1
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.

2SK1399-AT Related Products

2SK1399-AT 2SK1399-T2B-A 2SK1399-T1B-A 2SK1399 2SK1399-T2B 2SK1399-T1B
Description TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,100MA I(D),SC-59 2SK1399-T2B-A 2SK1399-T1B-A 100mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-59, 3 PIN TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,100MA I(D),SC-59 TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,100MA I(D),SC-59
Is it Rohs certified? conform to conform to conform to incompatible incompatible incompatible
Reach Compliance Code compli compli unknow compli unknow unknow
Configuration Single SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE Single Single
Maximum drain current (Abs) (ID) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 80 °C 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W
surface mount YES YES YES YES YES YES
Base Number Matches 1 1 1 1 1 1

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