TPSMC6.8 thru TPSMC43A
Vishay Semiconductors
formerly General Semiconductor
Automotive Surface Mount
Transient Voltage Suppressors
DO-214AB (SMC)
Cathode Band
Breakdown Voltage
6.8 to 43V
Peak Pulse Power
1500W
0.126 (3.20)
0.114 (2.90)
0.245 (6.22)
0.220 (5.59)
ed*
nt
ate
P
Dimensions in inches
and (millimeters)
Mounting Pad Layout
0.185 MAX.
(4.69 MAX.)
0.121 MIN.
(3.07 MIN.)
0.060 MIN.
(1.52 MIN.)
0.320 REF
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.320 (8.13)
0.305 (7.75)
0.008
(0.203)
Max.
*Patent #’s
4,980,315
5,166,769
5,278,094
Features
• Designed for under the hood surface mount
applications
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Easy pick and place
• Low profile package
• Built-in strain relief
• Ideal for automated placement
• Exclusive patented PAR
®
oxide passivated
chip construction
• 1500W peak pulse power capability with
a 10/1000ms waveform, repetition rate
(duty cycle): 0.01%
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
• For devices with V
(BR)
≥
10V I
D
are typically
less than 1.0mA at T
A
= 150°C
• High temperature soldering:
250°C/10 seconds at terminals
A
Available in uni-directional only
Mechanical Data
Case:
JEDEC DO-214AB molded plastic body over
passivated junction
Terminals:
Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity:
The color band denotes the cathode,
which is positive with respect to the anode under
normal TVS operation
Mounting Position:
Any
Weight:
0.007 oz., 0.2 g
Packaging codes/options:
9/3.5K per 13" Reel (16mm tape), 30K/box
7/850 EA per 7" Reel (16mm tape), 27K/box
Maximum Ratings and Thermal Characteristics
(T
Parameter
Peak pulse power dissipation with a 10/1000µs
waveform
(1)(2)
(Fig. 3)
Peak power pulse current with a 10/1000µs
waveform
(1)
(Fig. 1)
Peak forward surge current 8.3ms single half sine-wave
(2)(3)
Maximum instantaneous forward voltage at 100A
(3)
Operating junction and storage temperature range
Symbol
P
PPM
I
PPM
I
FSM
V
F
T
J,
T
STG
= 25°C unless otherwise noted)
Value
Minimum 1500
See Next Table
200
3.5
–65 to +185
Unit
W
A
A
V
°C
Notes:
(1) Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25°C per Fig. 2
(2) Mounted on 0.31 x 0.31” (8.0 x 8.0mm) copper pads to each terminal
(3) Measured on 8.3ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum
Document Number 88407
06-May-02
www.vishay.com
1
TPSMC6.8 thru TPSMC43A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Device
Device
Marking
Code
Breakdown Voltage
V
(BR)
(1)
at I
T
(V)
Min.
Max.
Test
Current
I
T
(mA)
Stand-off
Voltage
V
WM
(V)
Maximum
Reverse
Leakage
at V
WM
I
R
(µA)
T
J
= 150°C Maximum
Maximum Peak Pulse
Reverse
Surge
Leakage
Current
at V
WM
I
PPM
(2)
I
D
(µA)
(A)
Maximum
Clamping
Voltage
at I
PPM
Vc (V)
TPSMC6.8
TPSMC6.8A
TPSMC7.5
TPSMC7.5A
TPSMC8.2
TPSMC8.2A
TPSMC9.1
TPSMC9.1A
TPSMC10
TPSMC10A
TPSMC11
TPSMC11A
TPSMC12
TPSMC12A
TPSMC13
TPSMC13A
TPSMC15
TPSMC15A
TPSMC16
TPSMC16A
TPSMC18
TPSMC18A
TPSMC20
TPSMC20A
TPSMC22
TPSMC22A
TPSMC24
TPSMC24A
TPSMC27
TPSMC27A
TPSMC30
TPSMC30A
TPSMC33
TPSMC33A
TPSMC36
TPSMC36A
TPSMC39
TPMSC39A
TPSMC43
TPSMC43A
DDP
DEP
DFP
DGP
DHP
DKP
DLP
DMP
DNP
DPP
DQP
DRP
DSP
DTP
DUP
DVP
DWP
DXP
DYP
DZP
EDP
EEP
EFP
EGP
EHP
EKP
ELP
EMP
ENP
EPP
EQP
ERP
ESP
ETP
EUP
EVP
EWP
EXP
EYP
EZP
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
10.0
10.0
10.0
10.0
10.0
10.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
1000
1000
500
500
200
200
50
50
20
20
5.0
5.0
2.0
2.0
2.0
2.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
10000
10000
5000
5000
2000
2000
500
500
200
200
50
50
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
139.0
143.0
128.0
133.0
120.0
124.0
109.0
112.0
100.0
103.0
92.6
96.2
86.7
89.8
78.9
82.4
68.2
70.8
63.8
66.7
56.6
59.5
51.5
54.2
47.0
49.0
43.2
45.2
38.4
40.0
34.5
36.2
31.4
32.8
28.8
30.1
26.6
27.8
24.2
25.3
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
Notes:
(1) V
(BR)
measured after I
T
applied for 300µs, I
T
= square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
www.vishay.com
2
Document Number 88407
06-May-02
TPSMC6.8 thru TPSMC43A
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig.1 – Peak Pulse Power Rating Curve
T
A
= 25°C
Non-repetitive pulse
waveform shown in Fig. 3
10
Fig. 2 – Pulse Derating Curve
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage (%)
100
100
P
PPM,
Peak Power (KW)
75
50
1.0
25
0.31 x 0.31" (8.0 x 8.0mm)
copper pad areas
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
0
0
50
100
150
200
td, Pulse Width, sec.
T
A
, Ambient Temperature (°C)
Fig. 3 – Pulse Waveform
150
10,000
tr = 10µsec.
Peak Value
I
PPM
Fig. 4 – Typical Junction Capacitance
T
J
= 25°C
f = 1 MHz
Vsig = 50mVp-p
1,000
V
R
measured
at zero bias
I
PPM
— Peak Pulse Current, % I
RSM
100
Half Value — IPP
2
I
PPM
50
10/1000µsec. Waveform
as defined by R.E.A.
C
J
, Junction Capacitance, pF
T
J
= 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
100
V
R
measured
at stand-off
voltage, V
WM
10
1
10
100
200
td
0
0
1.0
2.0
3.0
4.0
t — Time (ms)
V
(BR)
, Breakdown Voltage (V)
Fig. 5 – Maximum Non-Repetitive
Peak Forward Surge Current
200
I
FSM,
Peak Forward Surge Current (A)
T
J
= T
J
max
8.3ms single half sine-wave
(JEDEC method)
100
50
10
1
5
10
50
100
Number of Cycles at 60 Hz
Document Number 88407
06-May-02
www.vishay.com
3
Microcontroller MCU
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