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TMPG06-30HE3_A/C

Description
Trans Voltage Suppressor Diode
CategoryDiscrete semiconductor    diode   
File Size81KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

TMPG06-30HE3_A/C Overview

Trans Voltage Suppressor Diode

TMPG06-30HE3_A/C Parametric

Parameter NameAttribute value
MakerVishay
Reach Compliance Codeunknown
ECCN codeEAR99
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
TMPG06-10 thru TMPG06-43A
www.vishay.com
Vishay General Semiconductor
PAR
®
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Available in uni-directional polarity only
• 400 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
MPG06
• Low incremental resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
PRIMARY CHARACTERISTICS
V
BR
V
WM
P
PPM
P
D
I
FSM
T
J
max.
Polarity
Package
10 V to 43 V
8.10 V to 36.8 V
400 W
1.0 W
40 A
185 °C
Uni-directional
MPG06
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case:
MPG06, molded epoxy over passivated junction
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ..., revision code only
applicable for part number with ± 5 % tolerance)
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity:
color band denotes cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
Peak pulse current with a 10/1000 μs waveform
Peak forward surge current 8.3 ms single half
(1)(2)
(1)
SYMBOL
(fig. 1)
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
(fig. 3)
VALUE
400
See next table
1.0
40
3.5
-65 to +185
UNIT
W
A
W
A
V
°C
Power dissipation on infinite heatsink at T
L
= 75 °C (fig. 5)
sine-wave
(2)
(2)
Maximum instantaneous forward voltage at 25 A
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
Revision: 22-Jul-16
Document Number: 88404
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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Description Trans Voltage Suppressor Diode Trans Voltage Suppressor Diode Trans Voltage Suppressor Diode Trans Voltage Suppressor Diode Trans Voltage Suppressor Diode Trans Voltage Suppressor Diode Trans Voltage Suppressor Diode Trans Voltage Suppressor Diode Trans Voltage Suppressor Diode
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
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