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BUK7108-40AIE_15

Description
N-channel TrenchPLUS standard level FET
File Size191KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

BUK7108-40AIE_15 Overview

N-channel TrenchPLUS standard level FET

BUK7108-40AIE
N-channel TrenchPLUS standard level FET
Rev. 03 — 19 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current sensing
and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed
and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Electrostatically robust due to
integrated protection diodes
Low conduction losses due to low
on-state resistance
Q101 compliant
Reduced component count due to
integrated current sensor
Suitable for standard level gate drive
sources
1.3 Applications
Electrical Power Assisted Steering
(EPAS)
Variable Valve Timing for engines
1.4 Quick reference data
Table 1.
V
DS
I
D
Quick reference
Conditions
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 2;
see
Figure 3;
V
GS
= 10 V; I
D
= 50 A;
T
j
= 25 °C; see
Figure 7;
see
Figure 8
T
j
> -55 °C; T
j
< 175 °C;
V
GS
> 10 V
[1]
Min
-
-
Typ
-
-
Max
40
117
Unit
V
A
drain-source voltage T
j
25 °C; T
j
175 °C
drain current
Symbol Parameter
Static characteristics
R
DSon
drain-source
on-state resistance
ratio of drain current
to sense current
-
6
8
mΩ
I
D
/I
sense
450
500
550
[1]
Current is limited by power dissipation chip rating.
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