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SDR1KSMTXV

Description
Rectifier Diode, Schottky, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, SM, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size156KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric View All

SDR1KSMTXV Overview

Rectifier Diode, Schottky, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, SM, 2 PIN

SDR1KSMTXV Parametric

Parameter NameAttribute value
MakerSSDI
package instructionHERMETIC SEALED, SM, 2 PIN
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Maximum output current1 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
Maximum reverse recovery time0.07 µs
surface mountYES
technologySCHOTTKY
Terminal formWRAP AROUND
Terminal locationEND
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR1ASM & SMS
thru
SDR1MSM & SMS
1.0 AMPS
50
1000 VOLTS
50 – 70 nsec ULTRA FAST RECTIFIER
Designer’s Data Sheet
Part Number/Ordering Information
1/
SDR1
__ __ __
Screening
2/
__
= Not Screened
TX = TX Level
TXV = TXV
S = S Level (for SM, use –S)
Package Type
SM = Surface Mount Round Tab
SMS = Surface Mount Square Tab
Voltage
A = 50 V
B = 100 V
D = 200 V
G = 400 V
J = 600 V
K = 800 V
M = 1000 V
Ultra Fast Recovery: 50-70 ns Max @ 25ºC
4/
80-120 ns Max @ 100ºC
4/
Single Chip Construction
PIV to 1000 Volts (1200V Version available)
Low Reverse Leakage Current
Hermetically Sealed
For High Efficiency Applications
Available in Round and Square Tab Versions
Metallurgically Bonded
TX, TXV, and S-Level Screening Available
2/
Hyper Fast Version available
FEATURES:
MAXIMUM RATINGS
3/
RATING
Peak Repetitive Reverse Voltage
And
DC Blocking Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, T
A
= 25ºC)
SYMBOL
SDR1A ..
SDR1B ..
SDR1D ..
SDR1G ..
SDR1J ..
SDR1K ..
SDR1M ..
VALUE
50
100
200
400
600
800
1000
1
25
-65 to +175
28
UNIT
V
RRM
V
RWM
V
R
Volts
I
O
I
FSM
T
OP
and T
STG
R
θJE
SM (Round Tab)
Amp
Amps
ºC
ºC/W
Peak Surge Current
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach
equilibrium between pulses, T
A
= 25ºC)
Operating & Storage Temperature
Thermal Resistance, Junction to End Tab
NOTES:
SM & SMS
SMS (Square Tab)
1/
For Ordering Information, Price, Operating Curves, and Availability- Contact
Factory.
2/
Screening Based on MIL-PRF-19500. Screening Flows Available on Request
3/
Unless Otherwise Specified, All Electrical Characteristics @25ºC.
4/
Recovery Conditions: I
F
= 0.5 Amp, I
R
= 1.0 Amp, I
RR
to .25 Amp.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0003H
DOC

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