BZV55C56 datasheet, PDF - EEWORLD Datasheet

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BZV55C56: Description56 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE; CategoryDiscrete semiconductor diode; File Size311KB，3 Pages; ManufacturerCentral Semiconductor

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BZV55C56 Overview

56 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

BZV55C56 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	SOD-80, 2 PIN
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	HIGH RELIABILITY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	ZENER DIODE
Maximum dynamic impedance	200 Ω
Maximum forward voltage (VF)	1.1 V
JESD-30 code	O-LELF-R2
JESD-609 code	e0
Maximum knee impedance	425 Ω
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Minimum operating temperature	-65 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	0.5 W
Certification status	Not Qualified
Nominal reference voltage	56 V
Maximum reverse current	0.05 µA
Reverse test voltage	39.2 V
surface mount	YES
technology	ZENER
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WRAP AROUND
Terminal location	END
Maximum time at peak reflow temperature	NOT SPECIFIED
Maximum voltage tolerance	5%
Working test current	2 mA

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BZV55C2V4

THRU

BZV55C75

SURFACE MOUNT

SILICON ZENER DIODE

0.5 WATT, 2.4 THRU 75 VOLTS

± 5% TOLERANCE

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BZV55C2V4

Series Surface Mount Silicon Zener Diode is a high

quality, well constructed, highly reliable component

designed for use in all types of commercial, industrial,

entertainment, computer, and automotive applications.

MARKING: CATHODE BAND

SOD-80 CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

Average Forward Current

Peak Repetitive Forward Current

Power Dissipation (TL=50°C)

Operating and Storage Junction Temperature

SYMBOL

IO

IFRM

PD

TJ, Tstg

UNITS

mA

mW

°C

250

500

-65 to +200

ELECTRICAL CHARACTERISTICS:

(TA=25°C), VF=0.9V MAX @ IF=10mA (for all types)

ZENER

VOLTAGE

VZ @ IZT

MIN

V

BZV55C2V4

BZV55C2V7

BZV55C3V0

BZV55C3V3

BZV55C3V6

BZV55C3V9

BZV55C4V3

BZV55C4V7

BZV55C5V1

BZV55C5V6

BZV55C6V2

BZV55C6V8

BZV55C7V5

BZV55C8V2

BZV55C9V1

BZV55C10

BZV55C11

2.280

2.565

2.850

3.135

3.420

3.705

4.085

4.465

4.845

5.320

5.890

6.460

7.125

7.790

8.645

9.500

10.45

NOM

V

2.4

2.7

3.0

3.3

3.6

3.9

4.3

4.7

5.1

5.6

6.2

6.8

7.5

8.2

9.1

10

11

MAX

V

2.520

2.835

3.150

3.465

3.780

4.095

4.515

4.935

5.355

5.880

6.510

7.140

7.875

8.610

9.555

10.50

11.55

TEST

CURRENT

IZT

mA

5.0

MAXIMUM ZENER

IMPEDANCE

ZZT @ IZT

Ω

100

95

90

80

60

40

10

15

20

ZZK @ IZK

Ω

600

500

480

400

150

80

100

150

mA

1.0

MAXIMUM

REVERSE

CURRENT

IR

μA

50

20

10

5.0

3.0

2.0

1.0

3.0

2.0

1.0

0.7

0.5

0.1

@ VR

V

1.0

2.0

4.0

5.0

6.0

7.0

8.0

MAXIMUM

ZENER

CURRENT

IZM

mA

208

185

167

152

139

128

116

106

96

89

81

74

67

61

55

50

45

TYPE

R2 (11-January 2010)

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