CJD112_10 datasheet, PDF - EEWORLD Datasheet

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CJD112_10: DescriptionSURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS; File Size428KB，3 Pages; ManufacturerCentral Semiconductor

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SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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CJD112 NPN

CJD117 PNP

SURFACE MOUNT

COMPLEMENTARY SILICON

POWER DARLINGTON TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CJD112, CJD117

types are Complementary Silicon Power Darlington

Transistors manufactured in a surface mount package

designed for low speed switching and amplifier

applications.

MARKING: FULL PART NUMBER

DPAK TRANSISTOR CASE

MAXIMUM RATINGS:

(TC=25°C unless otherwise noted)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

Power Dissipation (TA=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

ICM

TJ, Tstg

UNITS

°C

°C/W

100

5.0

2.0

4.0

1.75

-65 to +150

6.25

71.4

ELECTRICAL CHARACTERISTICS:

(TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICEO

VCE=50V

ICEV

VCE=80V, VBE(off)=1.5V

ICEV

VCE=80V, VBE(off)=1.5V, TC=125°C

ICBO

VCB=80V

ICBO

VCB=100V

IEBO

VEB=5.0V

BVCEO

IC=30mA

VCE(SAT)

IC=2.0A, IB=8.0mA

VCE(SAT)

IC=4.0A, IB=40mA

VBE(SAT)

IC=4.0A, IB=40mA

VBE(ON)

VCE=3.0V, IC=2.0A

hFE

VCE=3.0V, IC=0.5A

500

hFE

VCE=3.0V, IC=2.0A

1000

hFE

VCE=3.0V, IC=4.0A

200

VCE=10V, IC=750mA, f=1.0MHz

Cob

VCB=10V, IE=0, f=0.1MHz (CJD112)

Cob

VCB=10V, IE=0, f=0.1MHz (CJD117)

MAX

500

2.0

100

2.0

3.0

4.0

2.8

12000

UNITS

µA

100

200

MHz

R2 (4-January 2010)

CJD112_10 Related Products

	CJD112_10	CJD112	CJD117
Description	SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS	SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS	SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Is it lead-free?	-	Contains lead	Contains lead
Is it Rohs certified?	-	incompatible	incompatible
Maker	-	Central Semiconductor	Central Semiconductor
package instruction	-	DPAK-3	DPAK-3
Contacts	-	3	3
Reach Compliance Code	-	_compli	_compli
ECCN code	-	EAR99	EAR99
Shell connection	-	COLLECTOR	COLLECTOR
Maximum collector current (IC)	-	2 A	2 A
Collector-emitter maximum voltage	-	100 V	100 V
Configuration	-	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	-	200	200
JESD-30 code	-	R-PSSO-G2	R-PSSO-G2
JESD-609 code	-	e0	e0
Number of components	-	1	1
Number of terminals	-	2	2
Maximum operating temperature	-	150 °C	150 °C
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR
Package form	-	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	-	NPN	PNP
Maximum power consumption environment	-	20 W	20 W
Maximum power dissipation(Abs)	-	20 W	20 W
Certification status	-	Not Qualified	Not Qualified
surface mount	-	YES	YES
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	-	GULL WING	GULL WING
Terminal location	-	SINGLE	SINGLE
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED
transistor applications	-	SWITCHING	SWITCHING
Transistor component materials	-	SILICON	SILICON
Nominal transition frequency (fT)	-	25 MHz	25 MHz
VCEsat-Max	-	2 V	2 V

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