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CMKT2907AG

Description
SURFACE MOUNT DUAL PNP SILICON TRANSISTORS
CategoryDiscrete semiconductor    The transistor   
File Size503KB,3 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric Compare View All

CMKT2907AG Overview

SURFACE MOUNT DUAL PNP SILICON TRANSISTORS

CMKT2907AG Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
package instructionPLASTIC, ULTRAMINI-6
Contacts6
Reach Compliance Code_compli
ECCN codeEAR99
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage60 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G6
JESD-609 codee0
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Maximum off time (toff)100 ns
Maximum opening time (tons)45 ns
CMKT2907A
CMKT2907AG
SURFACE MOUNT
DUAL PNP SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKT2907A and
CMKT2907AG each consist of two individual isolated
2907A PNP silicon transistors, manufactured by the
epitaxial planar process and epoxy molded in an
SOT-363 surface mount package. This ULTRAmini™
device has been designed for small signal general
purpose and switching applications.
• The CMKT2907AG is
Halogen Free
by design.
SOT-363 CASE
MARKING CODES:
CMKT2907A: K07
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
CMKT2907AG: K7G
UNITS
V
V
V
mA
mW
°C
°C/W
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
60
60
5.0
600
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=50V
10
ICBO
VCB=50V, TA=125°C
10
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
VCE=30V, VBE=0.5V
IC=10µA
IC=10mA
IE=10µA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=0.1mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=10V,
VCE=10V,
IC=150mA
IC=500mA
75
100
100
100
50
300
50
60
60
5.0
0.4
1.6
1.3
2.6
UNITS
nA
µA
nA
V
V
V
V
V
V
V
R4 (13-January 2010)

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