CMKT5089M10
SURFACE MOUNT
DUAL NPN SILICON
MATCHED hFE TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKT5089M10
consists of two (2) individually isolated 5089
NPN silicon transistors with matched hFE. This
ULTRAmini™ device is manufactured by the epitaxial
planar process and epoxy molded in an SOT-363
surface mount package. The CMKT5089M10 has
been designed for applications requiring high gain
and low noise.
MARKING CODE: C9M0
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
nA
V
V
V
0.5
0.8
400
450
400
50
4.0
10
450
1800
2.0
MIN
0.9
MAX
1.0
5.0
dB
UNITS
mV
MHz
pF
pF
1200
V
V
SOT-363 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
30
25
4.5
50
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=15V
50
IEBO
VEB=4.5V
100
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
Cib
hfe
NF
IC=100μA
IC=1.0mA
IE=100μA
IC=10mA, IB=1.0mA
IC=10mA, IB=1.0mA
VCE=5.0V, IC=0.1mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=500μA, f=20MHz
VCB=5.0V, IE=0, f=1.0MHz
VBE=0.5V, IC=0, f=1.0MHz
VCE=5.0V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=100μA, RS=1.0kΩ,
f=10Hz to 15.7kHz
MATCHING CHARACTERISTICS:
SYMBOL
TEST CONDITIONS
hFE1/hFE2 *
VCE=5.0V, IC=1.0mA
|
VBE1-VBE2
|
VCE=5.0V, IC=100μA
* The lowest hFE reading is taken as hFE1.
30
25
4.5
R4 (13-January 2010)
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