CMLM0405
MULTI DISCRETE MODULE
™
SURFACE MOUNT
LOW VCE(SAT) SILICON NPN TRANSISTOR
AND
LOW VF SILICON SCHOTTKY DIODE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLM0405 is a
single NPN Transistor and Schottky Diode packaged in
a space saving SOT-563 case and designed for small
signal general purpose applications where size and
operational efficiency are prime requirements.
• Complementary Device:
CMLM0605
• Combination Low VCE(SAT) Transistor and
Low VF Schottky Diode.
SOT-563 CASE
MARKING CODE: C45
MAXIMUM RATINGS - CASE:
(TA=25°C)
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
MAXIMUM RATINGS - Q1:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
MAXIMUM RATINGS - D1:
(TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp≤1.0ms
Peak Forward Surge Current, tp =8.0ms
SYMBOL
PD
TJ, Tstg
Θ
JA
SYMBOL
VCBO
VCEO
VEBO
IC
SYMBOL
VRRM
IF
IFRM
IFSM
350
-65 to +150
357
60
40
6.0
200
40
500
3.5
10
UNITS
mW
°C
°C/W
UNITS
V
V
V
mA
UNITS
V
mA
A
A
ELECTRICAL CHARACTERISTICS - Q1:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICEV
VCE=30V, VEB=3.0V
BVCBO
IC=10μA
60
120
BVCEO
IC=1.0mA
40
60
BVEBO
IE=10μA
6.0
7.5
VCE(SAT) IC=10mA, IB=1.0mA
0.057
VCE(SAT) IC=50mA, IB=5.0mA
0.090
VBE(SAT)
IC=10mA, IB=1.0mA
0.65
0.75
VBE(SAT)
IC=50mA, IB=5.0mA
0.85
hFE
VCE=1.0V, IC=0.1mA
90
180
hFE
VCE=1.0V, IC=1.0mA
100
185
hFE
VCE=1.0V, IC=10mA
100
180
hFE
VCE=1.0V, IC=50mA
70
150
hFE
VCE=1.0V, IC=100mA
30
90
fT
VCE=20V, IC=10mA, f=100MHz
300
Cob
VCB=5.0V, IE=0, f=1.0MHz
Cib
VBE=0.5V, IC=0, f=1.0MHz
hie
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
hre
VCE=10V, IC=1.0mA, f=1.0kHz
0.1
MAX
50
0.100
0.200
0.85
0.95
UNITS
nA
V
V
V
V
V
V
V
300
4.0
8.0
12
10
MHz
pF
pF
kΩ
X10
-4
R2 (18-January 2010)
CMLM0405
MULTI DISCRETE MODULE
™
SURFACE MOUNT
LOW VCE(SAT) SILICON NPN TRANSISTOR
AND
LOW VF SILICON SCHOTTKY DIODE
ELECTRICAL CHARACTERISTICS - Q1 - Continued:
SYMBOL
TEST CONDITIONS
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
NF
VCE=5.0V, IC=100μA, RS =1.0KΩ,
f=10Hz to 15.7kHz
td
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
tr
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
ts
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
tf
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
ELECTRICAL CHARACTERISTICS - D1:
(TA=25°C)
IR
VR=10V
IR
VR=30V
BVR
IR=500μA
VF
IF=100μA
VF
IF=1.0mA
VF
IF=10mA
VF
IF=100mA
VF
IF=500mA
CT
VR=1.0V, f=1.0MHz
MIN
100
1.0
MAX
400
60
4.0
35
35
200
50
UNITS
μS
dB
ns
ns
ns
ns
20
100
40
0.13
0.21
0.27
0.35
0.47
50
μA
μA
V
V
V
V
V
V
pF
SOT-563 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter Q1
2) Base Q1
3) Cathode D1
4) Anode D1
5) Anode D1
6) Collector Q1
MARKING CODE: C45
R2 (18-January 2010)
w w w. c e n t r a l s e m i . c o m
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