MB8516S064CZ-102DG datasheet, PDF

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MB8516S064CZ-102DG: DescriptionSynchronous DRAM Module, 16MX64, 6ns, CMOS, PLASTIC, DIMM-168; Categorystorage storage; File Size507KB，20 Pages; ManufacturerFUJITSU; Websitehttp://edevice.fujitsu.com/fmd/en/index.html

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MB8516S064CZ-102DG Overview

Synchronous DRAM Module, 16MX64, 6ns, CMOS, PLASTIC, DIMM-168

MB8516S064CZ-102DG Parametric

Parameter Name	Attribute value
Maker	FUJITSU
package instruction	,
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	6 ns
JESD-30 code	R-XDMA-N168
memory density	1073741824 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	168
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX64
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Certification status	Not Qualified
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal location	DUAL

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FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-11138-1E

MEMORY

Un-buffered

16 M

64 BIT

SYNCHRONOUS DYNAMIC RAM DIMM

MB8516S064CZ-102/-103/-102L/-103L

168-pin, 4 Clock, 2-bank, based on 8 M

8 Bit SDRAMs with SPD

DESCRIPTION

The Fujitsu MB8516S064CZ is a fully decoded, CMOS Synchronous Dynamic Random Access Memory (SDRAM)

Module consisting of sixteen MB81F64842C devices which organized as four banks of 8 M

8 bits and a 2K-bit

serial EEPROM on a 168-pin glass-epoxy substrate.

The MB8516S064CZ features a fully synchronous operation referenced to a positive edge clock whereby all

operations are synchronized at a clock input which enables high performance and simple user interface

coexistence.

The MB8516S064CZ is optimized for those applications requiring high speed, high performance and large

memory storage, and high density memory organizations.

This module is ideally suited for workstations, PCs, laser printers, and other applications where a simple interface

is needed.

PRODUCT LINE & FEATURES

Parameter

CL-t

RCD

-t

Clock Frequency

Burst Mode Cycle Time

Output Valid from Clock

Two Banks Active

Power Dissipation

Self Refresh Mode

MB8516S064CZ-102/-102L

2-2-2 clk min.

100 MHz max.

10 ns min.

6 ns max. (CL = 2)

5904 mW max.

57.6 mW max. (std. power)

28.8 mW max. (low power)

•

MB8516S064CZ-103/-103L

3-2-2 clk min.

100 MHz max.

10 ns min.

6 ns max. (CL = 3)

5904 mW max.

57.6 mW max. (std. power)

28.8 mW max. (low power)

• Un-buffered 168-pin DIMM Socket Type

(Lead pitch: 1.27 mm)

• Conformed to JEDEC Standard (4 CLK)

• Organization: 16,777,216 words

64 bits

• Memory: MB81F64842C (8 M

8, 4-bank)

16 pcs

• 3.3 V

±0.3

V Supply Voltage

• All input/output LVTTL compatible

• Conformed to Intel PC/100 spec

4096 Refresh Cycle every 65.6 ms

Auto and Self Refresh

CKE Power Down Mode

DQM Byte Masking (Read/Write)

Serial Presence Detect (SPD) with Serial EEPROM:

Intel SPD spec Rev 1.2A Format

• Module size:

1.375” (height)

5.25” (length)

0.157” (thickness)

MB8516S064CZ-102DG Related Products

	MB8516S064CZ-102DG	MB8516S064CZ-102LDG	MB8516S064CZ-103LDG	MB8516S064CZ-103DG
Description	Synchronous DRAM Module, 16MX64, 6ns, CMOS, PLASTIC, DIMM-168	Synchronous DRAM Module, 16MX64, 6ns, CMOS, PLASTIC, DIMM-168	Synchronous DRAM Module, 16MX64, 6ns, CMOS, PLASTIC, DIMM-168	Synchronous DRAM Module, 16MX64, 6ns, CMOS, PLASTIC, DIMM-168
Maker	FUJITSU	FUJITSU	FUJITSU	FUJITSU
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	6 ns	6 ns	6 ns	6 ns
JESD-30 code	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168
memory density	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	64	64	64	64
Number of functions	1	1	1	1
Number of ports	1	1	1	1
Number of terminals	168	168	168	168
word count	16777216 words	16777216 words	16777216 words	16777216 words
character code	16000000	16000000	16000000	16000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C
organize	16MX64	16MX64	16MX64	16MX64
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	DUAL	DUAL	DUAL	DUAL

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