EEWORLDEEWORLDEEWORLD

Part Number

Search

MT46V16M16TG-5BLIT:K

Description
DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.40 INCH, PLASTIC, TSOP-66
Categorystorage    storage   
File Size4MB,91 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Download Datasheet Parametric View All

MT46V16M16TG-5BLIT:K Overview

DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.40 INCH, PLASTIC, TSOP-66

MT46V16M16TG-5BLIT:K Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicron Technology
Parts packaging codeTSOP
package instruction0.40 INCH, PLASTIC, TSOP-66
Contacts66
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.7 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)200 MHz
I/O typeCOMMON
interleaved burst length2,4,8
JESD-30 codeR-PDSO-G66
JESD-609 codee0
length22.22 mm
memory density268435456 bit
Memory IC TypeDDR DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals66
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize16MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP66,.46
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Celsius)235
power supply2.6 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length2,4,8
Maximum standby current0.004 A
Maximum slew rate0.29 mA
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.5 V
Nominal supply voltage (Vsup)2.6 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
width10.16 mm
256Mb: x4, x8, x16 DDR SDRAM
Features
Double Data Rate (DDR) SDRAM
MT46V64M4 – 16 Meg x 4 x 4 banks
MT46V32M8 – 8 Meg x 8 x 4 banks
MT46V16M16 – 4 Meg x 16 x 4 banks
Features
• V
DD
= 2.5V ±0.2V; V
DDQ
= 2.5V ±0.2V
V
DD
= 2.6V ±0.1V; V
DDQ
= 2.6V ±0.1V (DDR400)
1
• Bidirectional data strobe (DQS) transmitted/
received with data, that is, source-synchronous data
capture (x16 has two – one per byte)
• Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• DLL to align DQ and DQS transitions with CK
• Four internal banks for concurrent operation
• Data mask (DM) for masking write data
(x16 has two – one per byte)
• Programmable burst lengths (BL): 2, 4, or 8
• Auto refresh
64ms, 8192-cycle
• Longer-lead TSOP for improved reliability (OCPL)
• 2.5V I/O (SSTL_2-compatible)
• Concurrent auto precharge option supported
t
RAS lockout supported (
t
RAP =
t
RCD)
Options
Marking
• Configuration
64M4
64 Meg x 4 (16 Meg x 4 x 4 banks)
32M8
32 Meg x 8 (8 Meg x 8 x 4 banks)
16M16
16 Meg x 16 (4 Meg x 16 x 4 banks)
• Plastic package – OCPL
TG
66-pin TSOP
P
66-pin TSOP (Pb-free)
• Plastic package
CV
60-ball FBGA (8mm x 12.5mm)
CY
60-ball FBGA (8mm x 12.5mm)
(Pb-free)
• Timing – cycle time
-5B
5ns @ CL = 3 (DDR400)
-6
2
6ns @ CL = 2.5 (DDR333) FBGA only
-6T
2
6ns @ CL = 2.5 (DDR333) TSOP only
• Self refresh
None
Standard
L
Low-power self refresh
• Temperature rating
None
Commercial (0C to +70C)
IT
Industrial (–40C to +85C)
• Revision
:K
4
x4, x8, x16
:M
x4, x8, x16
Notes: 1. DDR400 devices operating at < DDR333
conditions can use V
DD
/V
DDQ
= 2.5V +0.2V.
2. Available only on Revision K.
3. Available only on Revision M.
4. Not recommended for new designs.
Table 1:
Key Timing Parameters
CL = CAS (READ) latency; MIN clock rate with 50% duty cycle at CL = 2 (-75E, -75Z), CL = 2.5 (-6, -6T, -75), and
CL = 3 (-5B)
Clock Rate (MHz)
Access
Window
±0.70ns
±0.70ns
±0.70ns
±0.75ns
±0.75ns
DQS–DQ
Skew
0.40ns
0.40ns
0.45ns
0.50ns
0.50ns
Speed Grade
-5B
-6
6T
-75E/-75Z
-75
CL = 2
133
133
133
133
100
CL = 2.5
167
167
167
133
133
CL = 3
200
n/a
n/a
n/a
n/a
Data-Out Window
1.6ns
2.1ns
2.0ns
2.5ns
2.5ns
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
256Mb_DDR_x4x8x16_D1.fm - 256Mb DDR: Rev. S, Core DDR: Rev. E 9/12 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 478  834  2362  1544  2030  10  17  48  32  41 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号