CMPD2836 datasheet, PDF - EEWORLD Datasheet

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CMPD2836: DescriptionSURFACE MOUNT DUAL, SILICON SWITCHING DIODES; CategoryDiscrete semiconductor diode; File Size463KB，3 Pages; ManufacturerCentral Semiconductor

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CMPD2836 Overview

SURFACE MOUNT DUAL, SILICON SWITCHING DIODES

CMPD2836 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Contacts	3
Reach Compliance Code	_compli
Configuration	COMMON ANODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	2
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	0.1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.35 W
Maximum repetitive peak reverse voltage	75 V
Maximum reverse recovery time	0.004 µs
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL

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CMPD2836

CMPD2838

SURFACE MOUNT

DUAL, SILICON

SWITCHING DIODES

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPD2836 and

CMPD2838 types are ultra-high speed switching diodes

manufactured by the epitaxial planar process, in an

epoxy molded surface mount package, designed for

high speed switching applications.

SOT-23 CASE

The following configurations are available:

CMPD2836

CMPD2838

DUAL, COMMON ANODE

DUAL, COMMON CATHODE

MARKING CODE: CA2

MARKING CODE: CA6

SYMBOL

VRRM

IFM

TJ, Tstg

200

300

350

-65 to +150

357

UNITS

°C

°C/W

MAXIMUM RATINGS:

(TA=25°C)

Peak Repetitive Reverse Voltage

Average Forward Current

Peak Forward Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS PER DIODE:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

BVR

trr

VR=50V

IR=100μA

IF=10mA

IF=50mA

IF=100mA

VR=0, f=1.0MHz

IR=IF=10mA, RL=100Ω, Rec. to 1.0mA

1.5

1.0

1.2

4.0

100

UNITS

R6 (25-January 2010)

CMPD2836 Related Products

	CMPD2836	CMPD2836_10	CMPD2838
Description	SURFACE MOUNT DUAL, SILICON SWITCHING DIODES	SURFACE MOUNT DUAL, SILICON SWITCHING DIODES	SURFACE MOUNT DUAL, SILICON SWITCHING DIODES
Is it lead-free?	Contains lead	-	Contains lead
Is it Rohs certified?	incompatible	-	incompatible
Contacts	3	-	3
Reach Compliance Code	_compli	-	_compli
Configuration	COMMON ANODE, 2 ELEMENTS	-	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON	-	SILICON
Diode type	RECTIFIER DIODE	-	RECTIFIER DIODE
JESD-30 code	R-PDSO-G3	-	R-PDSO-G3
JESD-609 code	e0	-	e0
Number of components	2	-	2
Number of terminals	3	-	3
Maximum operating temperature	150 °C	-	150 °C
Minimum operating temperature	-65 °C	-	-65 °C
Maximum output current	0.1 A	-	0.1 A
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE
Maximum power dissipation	0.35 W	-	0.35 W
Maximum repetitive peak reverse voltage	75 V	-	75 V
Maximum reverse recovery time	0.004 µs	-	0.004 µs
surface mount	YES	-	YES
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	-	GULL WING
Terminal location	DUAL	-	DUAL

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