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CMPD914E_10

Description
ENHANCED SPECIFICATION SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE
File Size470KB,3 Pages
ManufacturerCentral Semiconductor
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CMPD914E_10 Overview

ENHANCED SPECIFICATION SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE

CMPD914E
ENHANCED SPECIFICATION
SURFACE MOUNT
HIGH SPEED
SILICON SWITCHING DIODE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD914E is
an Enhanced version of the CMPD914 High Speed
Switching Diode in a SOT-23 surface mount package,
designed for high speed applications.
MARKING CODE: C5DE
FEATURED ENHANCED SPECIFICATIONS:
SOT-23 CASE
BVR from 100V min to 120V min. (150V TYP)
VF from 1.0V max to 0.85V max. (0.72V TYP)
UNITS
75
120
250
250
4000
2000
1000
350
-65 to +150
357
MAX
25
5.0
120
150
0.720
0.915
0.850
0.970
2.0
4.0
V
V
mA
mA
mA
mA
mA
mW
°C
°C/W
UNITS
nA
μA
V
V
V
pF
ns
MAXIMUM RATINGS:
(TA=25°C)
Continuous Reverse Voltage
SYMBOL
VR
VRRM
IF
IFRM
IFSM
IFSM
IFSM
PD
TJ, Tstg
Θ
JA
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0ms
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
IR
IR
VR=20V
VR=75V
IR=100µA
IF=10mA
IF=100mA
VR=0, f=1.0MHz
IR=IF=10mA, RL=100Ω, Rec. to 1.0 mA
Enhanced specification.
Additional Enhanced specification.
BVR
VF
♦♦
VF
CT
trr
♦♦
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