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GS1G

Description
Rectifier Diode, 1 Element, 1A, 400V V(RRM)
CategoryDiscrete semiconductor    diode   
File Size65KB,2 Pages
ManufacturerKuwait Semiconductor Co., Ltd.
Download Datasheet Parametric Compare View All

GS1G Overview

Rectifier Diode, 1 Element, 1A, 400V V(RRM)

GS1G Parametric

Parameter NameAttribute value
MakerKuwait Semiconductor Co., Ltd.
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current30 A
Number of components1
Maximum operating temperature175 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time2.5 µs
surface mountYES

GS1G Related Products

GS1G GS1K GS1A GS1B
Description Rectifier Diode, 1 Element, 1A, 400V V(RRM) Rectifier Diode, 1 Element, 1A, 800V V(RRM) Rectifier Diode, 1 Element, 1A, 50V V(RRM) Rectifier Diode, 1 Element, 1A, 100V V(RRM)
Maker Kuwait Semiconductor Co., Ltd. Kuwait Semiconductor Co., Ltd. Kuwait Semiconductor Co., Ltd. Kuwait Semiconductor Co., Ltd.
Reach Compliance Code unknown unknown unknown unknown
Configuration SINGLE SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V
Maximum non-repetitive peak forward current 30 A 30 A 30 A 30 A
Number of components 1 1 1 1
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C
Maximum output current 1 A 1 A 1 A 1 A
Maximum repetitive peak reverse voltage 400 V 800 V 50 V 100 V
Maximum reverse recovery time 2.5 µs 2.5 µs 2.5 µs 2.5 µs
surface mount YES YES YES YES

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Index Files: 201  1351  2034  1931  1840  5  28  41  39  38 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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