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CMPF4392

Description
SURFACE MOUNT N-CHANNEL SILICON JFET
CategoryDiscrete semiconductor    The transistor   
File Size336KB,3 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric Compare View All

CMPF4392 Overview

SURFACE MOUNT N-CHANNEL SILICON JFET

CMPF4392 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Minimum drain-source breakdown voltage40 V
Maximum drain-source on-resistance60 Ω
FET technologyJUNCTION
Maximum feedback capacitance (Crss)3.5 pF
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
CMPF4391
CMPF4392
CMPF4393
SURFACE MOUNT
N-CHANNEL
SILICON JFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPF4391 series
types are N-Channel Silicon Field Effect Transistors
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for
switching applications.
MARKING CODE:
CMPF4391:
6J
CMPF4392:
6K
CMPF4393:
6G
SYMBOL
VGD
VGS
VDS
IG
PD
TJ, Tstg
Θ
JA
UNITS
V
V
V
mA
mW
°C
°C/W
SOT-23 CASE
MAXIMUM RATINGS:
(TA=25°C)
Drain-Gate Voltage
Gate-Source Voltage
Drain-Source Voltage
Gate Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
40
40
40
50
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
CMPF4391
CMPF4392
SYMBOL
IGSS
IGSS
IDSS
ID(OFF)
ID(OFF)
ID(OFF)
ID(OFF)
ID(OFF)
ID(OFF)
BVGSS
VGS(OFF)
VGS(f)
VDS(ON)
VDS(ON)
VDS(ON)
rDS(ON)
rds(ON)
Ciss
TEST CONDITIONS
VGS=20V
VGS=20V, TA=100°C
VDS=20V
VDS=20V,
VDS=20V,
VDS=20V,
VDS=20V,
VDS=20V,
VDS=20V,
VGS=12V
VGS=7.0V
VGS=5.0V
VGS=12V, TA=100°C
VGS=7.0V, TA=100°C
VGS=5.0V, TA=100°C
MIN
-
-
50
-
-
-
-
-
-
40
4.0
-
-
-
-
-
-
-
MAX
0.1
0.2
150
0.1
-
-
0.2
-
-
-
10
1.0
0.4
-
-
30
30
14
MIN
-
-
25
-
-
-
-
-
-
40
2.0
-
-
-
-
-
-
-
MAX
0.1
0.2
75
-
0.1
-
-
0.2
-
5.0
1.0
-
0.4
-
60
60
14
CMPF4393
MIN
-
-
5.0
-
-
-
-
-
-
40
0.5
-
-
-
-
-
-
-
MAX
0.1
0.2
30
-
-
0.1
-
-
0.2
-
3.0
1.0
-
-
0.4
100
100
14
UNITS
nA
µA
mA
nA
nA
nA
µA
µA
µA
V
V
V
V
V
V
Ω
Ω
pF
IG=1.0µA
VDS=20V, ID=1.0nA
IG=1.0mA
ID=12mA
ID=6.0mA
ID=3.0mA
ID=1.0mA, VGS=0
VGS=0, ID=0, f=1.0kHz
VDS=20V, VGS=0, f=1.0MHz
R5 (27-January 2010)

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