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CMPTA96_10

Description
SURFACE MOUNT EXTREMELY HIGH VOLTAGE PNP SILICON TRANSISTOR
File Size330KB,3 Pages
ManufacturerCentral Semiconductor
Download Datasheet View All

CMPTA96_10 Overview

SURFACE MOUNT EXTREMELY HIGH VOLTAGE PNP SILICON TRANSISTOR

CMPTA96
SURFACE MOUNT
EXTREMELY HIGH VOLTAGE
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPTA96 type
is a surface mount epoxy molded PNP silicon planar
epitaxial transistor designed for extremely high voltage
applications.
MARKING CODE: C96
SOT-23 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
450
450
6.0
500
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=400V
IEBO
VBE=4.0V
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
fT
Cob
Cib
IC=100µA
IC=1.0mA
IE=10µA
IC=1.0mA, IB=0.1mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
VCE=10V, IC=10mA, f=10MHz
VCB=20V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
40
50
45
25
20
450
450
6.0
500
490
9.7
MAX
100
100
UNITS
nA
nA
V
V
V
0.15
0.20
0.30
0.50
1.0
V
V
V
V
120
35
200
MHz
7.0
130
pF
pF
R3 (3-February 2010)
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