EEWORLDEEWORLDEEWORLD

Part Number

Search

SI9410DYS62Z

Description
Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
CategoryDiscrete semiconductor    The transistor   
File Size235KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

SI9410DYS62Z Overview

Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SI9410DYS62Z Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)7 A
Maximum drain-source on-resistance0.03 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON

SI9410DYS62Z Preview

Si9410DY
September 1999
Si9410DY*
Single N-Channel Enhancement Mode MOSFET
General Description
This N-Channel Enhancement Mode MOSFET is
produced using Fairchild Semiconductor's advance
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
This device is well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Features
•
•
•
•
7.0 A, 30 V. R
DS(ON)
= 0.030
@ V
GS
= 10 V
R
DS(ON)
= 0.050
@ V
GS
= 4.5 V
Low gate charge.
Fast switching speed.
High power and current handling capability.
Applications
•
•
•
Battery switch
Load switch
Motor controls







SO-8

U Ã2Ã!$ƒ8ȁyr††Ã‚‡ur…v†rÁ‚‡rq
$EVROXWH 0D[LPXP 5DWLQJV
6\PERO
W
'66
W
*66
D
'
9…hvT‚ˆ…prÃW‚y‡htr
Bh‡rT‚ˆ…prÃW‚y‡htr
9…hvÃ8ˆ……r‡
Ã8‚‡vˆ‚ˆ†Ã
ÃQˆy†rq
Q
'
$
3DUDPHWHU
5DWLQJV
"
8QLWV
W
W
6
±
!
I‚‡rà h
&
"
Q‚r…Ã9v††vƒh‡v‚Ãs‚…ÃTvtyrÃPƒr…h‡v‚
I‚‡rà h
I‚‡rà i
!$
!
X
I‚‡rà p
U
-
ÃU
67*
Pƒr…h‡vtÃhqÃT‡‚…htrÃEˆp‡v‚ÃUr€ƒr…h‡ˆ…rÃShtr
$$ǂÃ $
°
8
7KHUPDO &KDUDFWHULVWLFV
S
θ
-$
S
θ
-&
Uur…€hyÃSr†v†‡hprÃEˆp‡v‚‡‚6€ivr‡
Uur…€hyÃSr†v†‡hprÃEˆp‡v‚‡‚8h†r
I‚‡rà h
$
!$
°
8X
°
8X
I‚‡rà 
3DFNDJH 2XWOLQHV DQG 2UGHULQJ ,QIRUPDWLRQ
'HYLFH 0DUNLQJ
(# 
'HYLFH
5HHO 6L]H
"¶¶
7DSH :LGWK
!€€
4XDQWLW\
!$ȁv‡†
TD(# 9`
9vrÃhqÀhˆshp‡ˆ…vtƂˆ…prƈiwrp‡Ã‡‚ÃpuhtrÐv‡u‚ˆ‡Ãƒ…v‚…Á‚‡vsvph‡v‚

©1999
Fairchild Semiconductor Corporation
Si9410DY Rev. C
Si9410DY
(OHFWULFDO &KDUDFWHULVWLFV
6\PERO
7W
9TT
U Ã2Ã!$ƒ8ȁyr††Ã‚‡ur…v†rÁ‚‡rq
$
3DUDPHWHU
9…hvT‚ˆ…prÃ7…rhxq‚ÃW‚y‡htr
7…rhxq‚ÃW‚y‡htrÃUr€ƒr…h‡ˆ…r
8‚rssvpvr‡
ar…‚ÃBh‡rÃW‚y‡htrÃ9…hvÃ8ˆ……r‡
7HVW &RQGLWLRQV
W
BT
Ã2ÃÃWÃD
9
Ã2Ã!$Ã 6
D
9
Ã2Ã!$à 6Srsr…rprqǂÃ!$ 8
0LQ 7\S
"
0D[
8QLWV
W
2II &KDUDFWHULVWLFV
7W
U
D
9TT
9TT
µ
µ
°
"
€W 8
°
E
W
9T
Ã2Ã!#ÃWÃW
BT
Ã2ÃÃW
W
9T
Ã2Ã!#ÃWÃW
BT
Ã2ÃÃWÃU
E
Ã2Ã$$ 8
!
°
µ
6
6
!$

D
BTTA
Bh‡r7‚q’ÃGrhxhtrÃ8ˆ……r‡
A‚…h…q
W
BT
Ã2Ã!ÃWÃW
9T
Ã2ÃÃW
D
BTTS
Bh‡r7‚q’ÃGrhxhtrÃ8ˆ……r‡
Sr‰r…†r
W
BT
Ã2Ã!ÃÃWÃW
9T
Ã2ÃÃW
 
6
2Q &KDUDFWHULVWLFV
W
BT‡u
I‚‡rÃ!
Bh‡rÃUu…r†u‚yqÃW‚y‡htr
Bh‡rÃUu…r†u‚yqÃW‚y‡htr
Ur€ƒr…h‡ˆ…rÃ8‚rssvpvr‡
T‡h‡vpÃ9…hvT‚ˆ…pr
PSr†v†‡hpr
W
9T
Ã2ÃW
BT
ÃD
9
Ã2Ã!$Ã 6
D
9
Ã2Ã!$à 6Srsr…rprqǂÃ!$ 8
µ
W
W
U
BT‡u
µ
°
##
€W 8
°
E
S
9T‚
W
BT
Ã2Ã ÃWÃD
9
Ã2Ã&Ã6
W
BT
Ã2Ã$ÃWÃD
9
Ã2Ã#Ã6
W
BT
Ã2Ã#$ÃWÃD
9
Ã2Ã"$Ã6
!#
"#
"&
"
'
"
#
$
D
9‚
t
AT
PT‡h‡rÃ9…hvÃ8ˆ……r‡
A‚…h…qÃU…h†p‚qˆp‡hpr
W
BT
Ã2Ã ÃWÃW
9T
Ã2Ã$ÃW
W
9T
Ã2Ã $ÃWÃD
9
Ã2Ã&Ã6
6
T
'\QDPLF &KDUDFWHULVWLFV
8
v††
8
⠠
8
…††
Dƒˆ‡Ã8hƒhpv‡hpr
Pˆ‡ƒˆ‡Ã8hƒhpv‡hpr
Sr‰r…†rÃU…h†sr…Ã8hƒhpv‡hpr
W
9T
Ã2Ã $ÃWÃW
BT
Ã2ÃÃW
sÃ2à ÃHC“
%$
"#$
($
ƒA
ƒA
ƒA
6ZLWFKLQJ &KDUDFWHULVWLFV
‡
q‚
‡
…
‡
q‚ss
‡
s
‡
……
Uˆ…PÃ9ryh’ÃUv€r
Uˆ…PÃSv†rÃUv€r
Uˆ…PssÃ9ryh’ÃUv€r
Uˆ…PssÃAhyyÃUv€r
I‚‡rÃ!
W
99
Ã2Ã!$ÃWÃD
9
Ã2Ã Ã6ÃS
G
Ã2Ã!$Ã
W
BT
Ã2Ã ÃÃWÃS
B@I
Ã2Ã%Ã
'
#
!"
(
"
%
$
#
†
†
†
†
T
9…hvT‚ˆ…prÃSr‰r…†rÃSrp‚‰r…’
Uv€r
D
2Ã!Ã6Ãqvq‡Ã2à 6 †
µ
%
R
t
R
R
tq
U‚‡hyÃBh‡rÃ8uh…tr
Bh‡rT‚ˆ…prÃ8uh…tr
Bh‡r9…hvÃ8uh…tr
W
9T
Ã2Ã $ÃWÃD
9
Ã2Ã!Ã6
W
BT
Ã2Ã ÃW
(
"!
#"
$
8
8
8
'UDLQ6RXUFH 'LRGH &KDUDFWHULVWLFV DQG 0D[LPXP 5DWLQJV
D
T
W
T9
Hh‘v€ˆ€Ã8‚‡vˆ‚ˆ†Ã9…hvT‚ˆ…prÃ9v‚qrÃA‚…h…qÃ8ˆ……r‡
9…hvT‚ˆ…prÃ9v‚qrÃA‚…h…q
W‚y‡htr
W
BT
Ã2ÃÃWÃD
T
Ã2Ã!Ã6ÃÃ
ÃÃÃÃÃÃÃI‚‡rÃ!
&
!

6
W
Notes:
1:
R
θJA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 50° C/W when
mounted on a 1 in
2
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.04 in
2
pad of 2 oz. copper.
c) 125° C/W on a minimum
mounting pad.
Scale 1 : 1 on letter size paper
2:
Pulse Test: Pulse Width
300
µs,
Duty Cycle
2.0%
Si9410DY Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
FAST
DISCLAIMER
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G

SI9410DYS62Z Related Products

SI9410DYS62Z SI9410DYL99Z SI9410DYD84Z SI9410DYL86Z
Description Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
Maker Fairchild Fairchild Fairchild Fairchild
Parts packaging code SOT SOT SOT SOT
package instruction SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8
Contacts 8 8 8 8
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V 30 V 30 V
Maximum drain current (ID) 7 A 7 A 7 A 7 A
Maximum drain-source on-resistance 0.03 Ω 0.03 Ω 0.03 Ω 0.03 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
Number of components 1 1 1 1
Number of terminals 8 8 8 8
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Engineers must-have - commonly used electronic components information (welding process)
Feeling that everyone needs it, I share it! The content includes electrical graphic symbols that are often encountered in electronic design, the model nomenclature and main technical parameters of com...
gauson Test/Measurement
How to convert a CString type into a double type under EVC?
CString str; str=L"111.111"; Now I want to convert the string of this CString type variable into double type. How can I do it?...
天涯浪客 Embedded System
Main technical indicators of micro camera monitoring
1. CCD size, i.e., the target surface of the micro camera. Originally, it was mostly 1/2 inch, but now 1/3 inch is popular, and 1/4 inch and 1/5 inch are also commercialized. 2. CCD micro camera pixel...
lolo Industrial Control Electronics
The invisible protective layer of the air umbrella
This concept umbrella uses compressed air as a rain shield. By adjusting the control button on the umbrella handle, you can freely control and adjust the diameter of the air umbrella. In this way, the...
wljmm Creative Market
Inductor and capacitor knowledge points record
1. Capacitive reactance: Xc = 1/(ωC) = 1/(2πfC)ω---------angular frequency (angular velocity)π---------pi, approximately equal to 3.14f---------frequency, the power frequency of my country's national ...
小魏哥哥 Switching Power Supply Study Group
WinCE4.2 and EVC4.0 installation problem!!!
Hello everyone: I installed WinCE4.2 today, and then installed EVC4.0, EVC SP2 and STANDARD_SDK. But the following problems occurred: 1 After installing WinCE4.2, the following prompt appeared in the ...
liyiwu444 Embedded System

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1010  640  2696  1029  2277  21  13  55  46  3 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号