CMSD6001C datasheet, PDF - EEWORLD Datasheet

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CMSD6001C: Description0.25 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size674KB，3 Pages; ManufacturerCentral Semiconductor

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CMSD6001C Overview

0.25 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE

CMSD6001C Parametric

Parameter Name	Attribute value
Maker	Central Semiconductor
package instruction	R-PDSO-G3
Contacts	3
Manufacturer packaging code	SUPERMINI-3
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-G3
Number of components	2
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	0.25 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.275 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	100 V
Maximum reverse recovery time	3 µs
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL

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CMSD6001

CMSD6001A

CMSD6001C

CMSD6001S

SURFACE MOUNT LOW LEAKAGE

SILICON SWITCHING DIODES

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMSD6001

SERIES are silicon switching diodes manufactured

by the epitaxial planar process, epoxy molded in a

SUPERmini™ surface mount package, designed for

switching applications requiring an extremely low

leakage diode.

SOT-323 CASE

•

Device is

Halogen Free

by design

CMSD6001:

CMSD6001A:

CMSD6001C:

CMSD6001S:

SINGLE

DUAL, COMMON ANODE

DUAL, COMMON CATHODE

DUAL, IN-SERIES

MARKING

SYMBOL

VRRM

IFRM

IFSM

TJ, Tstg

CODE:

6C1

61A

61C

61S

100

250

4.0

1.0

275

-65 to +150

455

UNITS

°C

°C/W

MAXIMUM RATINGS:

(TA=25°C)

Continuous Reverse Voltage

Peak Repetitive Reverse Voltage

Continuous Forward Current

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=1.0μs

Peak Forward Surge Current, tp=1.0s

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS PER DIODE:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

VR=75V

500

BVR

IR=100μA

100

trr

IF=1.0mA

IF=10mA

IF=100mA

VR=0, f=1.0MHz

IR=IF=10mA, Irr=1.0mA, RL=100Ω

0.85

0.95

1.1

2.0

3.0

UNITS

μs

R2 (8-February 2010)

CMSD6001C Related Products

	CMSD6001C	CMSD6001	CMSD6001S	CMSD6001A
Description	0.25 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE	0.25 A, 100 V, SILICON, SIGNAL DIODE	0.25 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE	0.25 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE
package instruction	R-PDSO-G3	HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SUPERMINI-3	HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SUPERMINI-3	HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SUPERMINI-3
Contacts	3	3	3	3
Manufacturer packaging code	SUPERMINI-3	SUPERMINI-3	SUPERMINI-3	SUPERMINI-3
Reach Compliance Code	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99
Configuration	COMMON CATHODE, 2 ELEMENTS	SINGLE	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	2	1	2	2
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	0.25 A	0.25 A	0.25 A	0.25 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Maximum power dissipation	0.275 W	0.275 W	0.275 W	0.275 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	100 V	100 V	100 V	100 V
Maximum reverse recovery time	3 µs	3 µs	3 µs	3 µs
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL

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