CMUDM8001 datasheet, PDF - EEWORLD Datasheet

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CMUDM8001: DescriptionSURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET; CategoryDiscrete semiconductor The transistor; File Size346KB，3 Pages; ManufacturerCentral Semiconductor

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CMUDM8001 Overview

SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CMUDM8001 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	ULTRAMINI-3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Configuration	SINGLE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (ID)	0.1 A
Maximum drain-source on-resistance	12 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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CMUDM8001

SURFACE MOUNT

P-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFET

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMUDM8001

is an Enhancement-mode P-Channel Field Effect

Transistor, manufactured by the P-Channel DMOS

Process, designed for high speed pulsed amplifier and

driver applications. This MOSFET offers Low rDS(on)

and Low Theshold Voltage.

MARKING CODE: C8A

SOT-523 CASE

APPLICATIONS:

• Load/Power Switches

• Power Supply Converter Circuits

• Battery Powered Portable Equipment

MAXIMUM RATINGS:

(TA=25°C)

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Steady State)

Continuous Drain Current

Power Dissipation

Operating and Storage Junction Temperature

FEATURES:

•

Power Dissipation 250mW

Low rDS(on)

Low Threshold Voltage

Logic Level Compatible

Small, SOT-523 Surface Mount Package

Complementary Device: CMUDM7001

UNITS

°C

SYMBOL

VDS

VGS

TJ, Tstg

100

200

250

-65 to +150

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

IGSSF, IGSSR

IDSS

BVDSS

VGS(th)

rDS(ON)

gFS

Crss

Ciss

Coss

ton

toff

VGS=10V, VDS=0

VDS=20V, VGS=0

VGS=0, ID=100μA

VDS=VGS, ID=250μA

VGS=4.0V, ID=10mA

VGS=2.5V, ID=10mA

VGS=1.5V, ID=1.0mA

VDS=10V, ID=100mA

VDS=3.0V, VGS=0, f=1.0MHz

VDS=3.0V,

VGS=0, f=1.0MHz

ID=10mA

100

0.6

MAX

1.0

1.1

8.0

UNITS

μA

VDD=3.0V, VGS=2.5V,

R1 (9-February 2010)

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