CSDD-25M datasheet, PDF - EEWORLD Datasheet

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CSDD-25M: DescriptionSURFACE MOUNT SILICON CONTROLLED RECTIFIER 25 AMP, 600 THRU 800 VOLTS; CategoryAnalog mixed-signal IC Trigger device; File Size407KB，3 Pages; ManufacturerCentral Semiconductor

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CSDD-25M Overview

SURFACE MOUNT SILICON CONTROLLED RECTIFIER 25 AMP, 600 THRU 800 VOLTS

CSDD-25M Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Parts packaging code	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	_compli
Shell connection	ANODE
Configuration	SINGLE
Maximum DC gate trigger current	30 mA
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	25 A
Off-state repetitive peak voltage	400 V
Repeated peak reverse voltage	400 V
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR

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CSDD-25M

CSDD-25N

SURFACE MOUNT

SILICON CONTROLLED RECTIFIER

25 AMP, 600 THRU 800 VOLTS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CSDD-25M series

type is an Epoxy Molded Silicon Controlled Rectifier

designed for sensing circuit applications and control

systems.

MARKING: FULL PART NUMBER

D

2

PAK CASE

MAXIMUM RATINGS:

(TC=25°C unless otherwise noted)

Peak Repetitive Off-State Voltage

RMS On-State Current (TC=90°C)

Peak Non-Repetitive Surge Current, t=8.3ms

Peak Non-Repetitive Surge Current, t=10ms

I

2

t Value for Fusing, t=10ms

Peak Gate Power, tp=10μs

Average Gate Power Dissipation

Peak Forward Gate Current, tp=10μs

Peak Forward Gate Voltage, tp=10μs

Peak Reverse Gate Voltage, tp=10μs

Critical Rate of Rise of On-State Current

Operating Junction Temperature

Storage Temperature

Thermal Resistance

SYMBOL

VDRM, VRRM

IT(RMS)

ITSM

I

2

t

PGM

PG(AV)

IFGM

VFGM

VRGM

di/dt

TJ

Tstg

Θ

JA

Θ

JC

CSDD-25M

600

CSDD-25N

800

25

UNITS

V

A

2

s

W

A

V

A/μs

°C

°C/W

260

250

310

40

1.0

4.0

16

5.0

100

-40 to +125

-40 to +150

60

1.3

ELECTRICAL CHARACTERISTICS:

(TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

IDRM, IRRM

IGT

IH

VGT

VTM

dv/dt

VRRM, TC=125°C

VD=12V, RL=10Ω

IT=100mA

VD=12V, RL=10Ω

ITM=50A, tp=380μs

VD=

2

/

3

VDRM, TC=125°C

200

Rated VDRM,

VRRM

TYP

MAX

10

4.0

UNITS

μA

mA

V

V/μs

4.2

12.5

0.65

30

50

1.50

1.80

R2 (17-February 2010)

CSDD-25M Related Products

	CSDD-25M	CSDD-25N	CSDD-25M_10
Description	SURFACE MOUNT SILICON CONTROLLED RECTIFIER 25 AMP, 600 THRU 800 VOLTS	SURFACE MOUNT SILICON CONTROLLED RECTIFIER 25 AMP, 600 THRU 800 VOLTS	SURFACE MOUNT SILICON CONTROLLED RECTIFIER 25 AMP, 600 THRU 800 VOLTS
Is it lead-free?	Contains lead	Contains lead	-
Is it Rohs certified?	incompatible	incompatible	-
Maker	Central Semiconductor	Central Semiconductor	-
Parts packaging code	D2PAK	D2PAK	-
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	-
Contacts	3	3	-
Reach Compliance Code	_compli	_compli	-
Shell connection	ANODE	ANODE	-
Configuration	SINGLE	SINGLE	-
Maximum DC gate trigger current	30 mA	30 mA	-
JESD-30 code	R-PSSO-G2	R-PSSO-G2	-
JESD-609 code	e0	e0	-
Number of components	1	1	-
Number of terminals	2	2	-
Maximum operating temperature	125 °C	125 °C	-
Minimum operating temperature	-40 °C	-40 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	-
Package form	SMALL OUTLINE	SMALL OUTLINE	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-
Certification status	Not Qualified	Not Qualified	-
Maximum rms on-state current	25 A	25 A	-
Off-state repetitive peak voltage	400 V	600 V	-
Repeated peak reverse voltage	400 V	600 V	-
surface mount	YES	YES	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
Terminal form	GULL WING	GULL WING	-
Terminal location	SINGLE	SINGLE	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-
Trigger device type	SCR	SCR	-

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