N-Channel Depletion Mode
Lateral DMOS FET
CORPORATION
SD2100 / SST2100
FEATURES
DESCRIPTION
The SD2100/SST2100 is a depletion mode DMOS lateral FET
that provides ultra high speed switching with very low
capacitance. The product is available in TO-72 and surface
mount SOT-143.
ORDERING INFORMATION
Part
SD2100
SST2100
XSD2100
Package
Temperature Range
TO-72
-55
o
C to +125
o
C
SOT-143
-55
o
C to +125
o
C
Sorted Chips in Carriers -55
o
C to +125
o
C
•
Fast Switching . . . . . . . . . . . . . . . . . . . . . . . . . t
ON
1.0ns
•
Low Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . c
rss
2pf
•
Low R
ON
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50Ω
•
Analog Switches
•
Amplifiers
APPLICATIONS
CONNECTION DIAGRAMS
3
TO-72
2
4
1
3
2
DRAIN
(2)
BODY
(4)
GATE
(3)
SOURCE
1
1
2
3
4
SOURCE
DRAIN
GATE
SUBSTRATE
3
2
1
4
4
1
BOTTOM VIEW
4
BODY
AND CASE
DRAIN
2
3
GATE
SOURCE
(1)
BODY IS INTERNALLY
CONNECTED TO THE CASE
(TOP VIEW)
PART MARKING (SOT-231)
CD1-2
SST2100
D10
SD2100 / SST2100
CORPORATION
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise noted)
SYMBOL
V
GS
V
DS
I
D
P
D
PARAMETERS/TEST CONDITIONS
Gate-Source Voltage
Drain-Source Voltage
Drain Current
Power Dissipation
Power Derating
T
J
T
stg
T
L
Operating Junction Temperature
Storage Temperature
Lead Temperature (1/16" from case for 10 sec.)
LIMITS
±25
25
50
300
2.4
-55 to 150
-55 to 150
300
o
UNITS
V
mA
mW
mW/
o
C
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise noted)
SYMBOL
STATIC
V
(BR)DS
I
GSS
I
DSS
V
GS(OFF
)
V
GS
Drain-Source Breakdown Voltage
Gate Reverse Current
Saturation Drain Current
Gate-Source Cutoff
Gate-Source Voltage
0.4
120
r
DS(ON)
DYNAMIC
g
fs
g
os
g
fs
g
os
C
iss
C
rss
SWITCHING
t
d(ON)
t
r
t
OFF
Turn-OFF Time
0.7
Turn-ON Time
0.4
5
ns
V
DD
= 5V, R
L
= 680Ω, V
IN
= -4V to -2V
Forward Transconductance
Output Conductance
Forward Transconductance
Output Conductance
Common-Source Input Capacitance
Reverse Transfer Capacitance
8000
250
10000
350
5
1
7000
V
DG
= 10V, V
BS
= 0V, I
D
= 10mA, f = 1kHz
500
6
pF
2
V
DS
= 10V, f = 1MHz, V
GS
= V
BS
= -5V
1000
V
DS
= 10V, V
GS
= V
BS
= 0V, f = 1kHz
500
µS
Drain-Source On-Resistance
40
50
0
1.5
200
Ω
25
±0.05
7
-1.5
-0.3
-1
0.5
15
±1
10
-2
1
V
V
nA
mA
V
GS
= V
BS
= -5V, I
D
= 1µA
V
GS
=
±25V,
V
DS
= V
BS
= 0V
V
DS
= 10V, V
GS
= V
BS
= 0V
V
DS
= 10V, I
D
= 1µA, V
BS
= 0V
V
DG
= 10V
V
BS
= 0V
I
D
= 100µA
V
BS
= 0V
I
D
= 5mA
I
D
= 10mA
V
GS
= 0V
V
GS
= 5V
PARAMETER
TYP
1
MIN
MAX
UNIT
TEST CONDITIONS
Note1:
For design aid only, not subject to production testing.
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