Ordering number : ENA1069
EC3H07BA
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
EC3H07BA
Features
•
•
UHF to S Band Low-Noise Amplifier
and OSC Applications
•
•
•
•
Low noise : NF=1.5dB typ (f=2GHz).
High cutoff frequency : fT=10GHz typ (VCE=1V).
fT=12.5GHz typ (VCE=3V).
Low operating voltage.
High gain :⏐S21e⏐
2
=9.5dB typ (f=2GHz).
Ultraminiature (1006 size) and thin (0.50mm) leadless package .
Halogen free compliance (UL94HB).
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
Ratings
9
4
2
30
100
150
--55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE
fT1
fT2
VCB=5V, IE=0A
VEB=1V, IC=0A
VCE=1V, IC=5mA
VCE=1V, IC=5mA
VCE=3V, IC=15mA
100
8
10
12.5
Conditions
Ratings
min
typ
max
1.0
10
160
GHz
GHz
Unit
μA
μA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
31710AB TK IM TC-00002251 No. A1069-1/7
EC3H07BA
9
8
IC -- VCE
0.05mA
30
IC -- VBE
25
Collector Current, IC -- mA
7
6
5
4
3
2
1
0
0
Collector Current, IC -- mA
0.03mA
15
0.02mA
10
0.01mA
5
IB=0mA
1
2
3
4
IT15425
0
0
0.2
0.4
0.6
0.8
1.0
1.2
IT15426
Collector-to-Emitter Voltage, VCE -- V
1000
7
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
5
f T -- IC
Gain-Bandwidth Product, f T -- GHz
5
3
2
DC Current Gain, hFE
3
2
VCE=3V
1V
10
7
5
3
2
3V
V CE=
1V
100
7
5
3
2
10
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
Collector Current, IC -- mA
1.0
5 7 100
IT15427
1.0
1.0
2
3
5
7
10
2
3
1V
5
0.04mA
20
VCE=3V
Cob -- VCB
Reverse Transfer Capacitance, Cre -- pF
f=1MHz
Collector Current, IC -- mA
1.0
7 100
IT15435
Cre -- VCB
f=1MHz
7
Output Capacitance, Cob -- pF
7
5
5
3
3
2
2
0.1
0.1
2
3
5
7
1.0
2
3
5
Collector-to-Base Voltage, VCB -- V
20
2
Forward Transfer Gain,
⏐S21e⏐
-- dB
⏐S21e⏐
2
-- IC
V CE=3V
1V
10
IT15429
7
0.1
0.1
2
3
5
7
1.0
2
3
5
Collector-to-Base Voltage, VCB -- V
15
⏐S21e⏐
2
-- IC
7 10
IT15430
f=1GHz
2
Forward Transfer Gain,
⏐S21e⏐
-- dB
f=2GHz
13
18
16
14
12
10
8
6
4
2
0
1.0
2
3
5
V
V CE=3
11
9
1V
7
5
3
1
1.0
7
10
2
3
5
Collector Current, IC -- mA
100
IT15436
7
2
3
5
7
10
2
3
5
Collector Current, IC -- mA
7 100
IT15437
No. A1069-3/7
51mcu
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