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KFG1216U2M-DIB0

Description
Flash, 32MX16, 14.5ns, PBGA63,
Categorystorage    storage   
File Size1MB,93 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Environmental Compliance
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KFG1216U2M-DIB0 Overview

Flash, 32MX16, 14.5ns, PBGA63,

KFG1216U2M-DIB0 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSAMSUNG
package instructionFBGA, BGA63,10X12,32
Reach Compliance Codecompliant
Maximum access time14.5 ns
command user interfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B63
memory density536870912 bit
Memory IC TypeFLASH
memory width16
Number of departments/size512
Number of terminals63
word count33554432 words
character code32000000
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize32MX16
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA63,10X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
page size1K words
Parallel/SerialPARALLEL
power supply3.3 V
Certification statusNot Qualified
ready/busyYES
Department size64K
Maximum standby current0.00005 A
Maximum slew rate0.02 mA
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
switch bitNO
typeMLC NAND TYPE
OneNAND512/OneNAND1GDDP
FLASH MEMORY
OneNAND SPECIFICATION
Density
512Mb
Part No.
KFG1216Q2M-DEB
KFG1216D2M-DEB
KFG1216U2M-DIB
1Gb
KFH1G16Q2M-DEB
V
CC
(core & IO)
1.8V(1.7V~1.95V)
2.65V(2.4V~2.9V)
3.3V(2.7V~3.6V)
1.8V(1.7V~1.95V)
Temperature
Extended
Extended
Industrial
Extended
PKG
63FBGA(LF)
63FBGA(LF)
63FBGA(LF)
N/A
Version: Ver. 1.4
Date: June 15th, 2005
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