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CZTA44TRLEADFREE

Description
Power Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size34KB,2 Pages
ManufacturerCentral Semiconductor
Environmental Compliance  
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CZTA44TRLEADFREE Overview

Power Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin,

CZTA44TRLEADFREE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerCentral Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.3 A
Collector-based maximum capacity7 pF
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
VCEsat-Max0.75 V

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Description Power Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, Power Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, Power Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, Power Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, Power Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, Power Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin,
Is it lead-free? Lead free Contains lead Contains lead Lead free Contains lead Lead free
Is it Rohs certified? conform to incompatible incompatible conform to incompatible conform to
Reach Compliance Code compliant not_compliant unknown compliant unknown compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 0.3 A 0.3 A 0.3 A 0.3 A 0.3 A 0.3 A
Collector-based maximum capacity 7 pF 7 pF 7 pF 7 pF 7 pF 7 pF
Collector-emitter maximum voltage 400 V 400 V 400 V 400 V 400 V 400 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 50 50 50 50 50 50
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
JESD-609 code e3 e0 e0 e3 e0 e3
Number of components 1 1 1 1 1 1
Number of terminals 4 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED NOT SPECIFIED 260 NOT SPECIFIED 260
Polarity/channel type NPN NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 2 W 2 W 2 W 2 W 2 W 2 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Matte Tin (Sn) Tin/Lead (Sn/Pb) Matte Tin (Sn)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 NOT SPECIFIED NOT SPECIFIED 10 NOT SPECIFIED 10
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 20 MHz 20 MHz 20 MHz 20 MHz 20 MHz 20 MHz
VCEsat-Max 0.75 V 0.75 V 0.75 V 0.75 V 0.75 V 0.75 V
Maker Central Semiconductor - Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor
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